SOT23 Small Outline Plastic Package Transistor PAKER PMBT3904 NPN Epitaxial Planar Die Construction

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The PMBT3904 is an NPN epitaxial planar die construction transistor in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package with tape/reel packing options. The complementary PNP transistor is the PMBT3906.

Product Attributes

Brand: (Paker Microelectronics)
Origin: Shenzhen, China
Certifications: UL: 94V-0, Halogen free, RoHS compliant
Package Type: SOT-23 Small Outline Plastic Package
Marking: 1AM

Technical Specifications

Parameter	Symbol	Test Conditions	MIN	MAX	UNIT
Collector-Base Breakdown Voltage	VCBO	IC= 10A, IE=0		60	V
Collector-Emitter Breakdown Voltage	VCEO	IC= 1mA, IB=0		40	V
Emitter-Base Breakdown Voltage	VEBO	IE=10A, IC=0		6	V
Collector Cut-off Current	ICBO	VCB=60V, IE=0		1.0	A
Collector Cut-off Current	ICEX	VCE=30V,VBE(off)=3V		50	nA
Emitter Cut-off Current	IEBO	VEB=5V, IC=0		1.0	A
DC Current Gain	hFE(1)	VCE=1V, IC=10mA	100	400
DC Current Gain	hFE(2)	VCE=1V, IC= 50mA	60
DC Current Gain	hFE(3)	VCE=1V, IC= 100mA	30
Collector-Emitter Saturation Voltage	VCE(sat)	IC=50mA, IB= 5mA		0.3	V
Base-Emitter Saturation Voltage	VBE(sat)	IC= 50mA, IB= 5mA		0.95	V
Transition Frequency	fT	VCE=20V, IC=10mA,f=100MHz	300		MHz
Delay Time	td	VCC=3V,VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA		35	nS
Rise Time	tr	VCC=3V,VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA		35	nS
Storage Time	ts	VCC=3V,IC=10mA, IB1=-IB2=1mA		200	nS
Fall Time	tf	VCC=3V,IC=10mA, IB1=-IB2=1mA		50	nS
Thermal Resistance Junction to Ambient	RJA			625	/W
Junction Temperature	TJ			150
Storage Temperature	Tstg		-55	150