Load Switching MOSFET PJSEMI PJM3402NSC with 4A Continuous Current and 1.3W Maximum Power Dissipation
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Product Description
Product Overview
The PJM3402NSC is an N-Channel Enhancement Mode Power MOSFET designed for load switching and PWM applications, offering high power and current handling capabilities. It features a VDS of 30V and an ID of 4A, with a low RDS(on) of less than 45m at VGS=10V. This component is ideal for power management solutions.
Product Attributes
- Brand: Pingjing Semiconductor (implied by www.pingjingsemi.com)
- Package: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Drain Current-Continuous | ID | 4 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 16 | A | ||
| Maximum Power Dissipation | PD | 1.3 | W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -55 | +150 | °C | ||
| Thermal Characteristics | ||||||
| Thermal Resistance,Junction-to-Ambient | RθJA | Note2 | 96 | °C/W | ||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±12V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3,VDS=VGS,ID=250μA | 0.5 | -- | 1.4 | V |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=10V, ID=4A | -- | 36 | 45 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3,VGS=4.5V, ID=3A | -- | 39 | 50 | mΩ |
| Forward Transconductance | gFS | Note3,VDS=5V,ID=1A | -- | 4 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 285 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 33 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 27 | -- | pF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω | -- | 15 | -- | nS |
| Turn-on Rise Time | tr | VDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω | -- | 42 | -- | nS |
| Turn-off Delay Time | td(off) | VDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω | -- | 16 | -- | nS |
| Turn-off Fall Time | tf | VDS=15V,ID=2A, VGS=4.5V,RGEN=3Ω | -- | 10 | -- | nS |
| Total Gate Charge | Qg | VDS=15V,ID=4A, VGS=4.5V | -- | 2.6 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=4A, VGS=4.5V | -- | 0.6 | -- | nC |
| Gate-Drain Charge | Qg d | VDS=15V,ID=4A, VGS=4.5V | -- | 0.9 | -- | nC |
| Source-Drain Diode Characteristics | ||||||
| Body Diode Forward Voltage | VSD | Note3,VGS=0V,IS=4A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 4 | A |
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