Durable OSEN OSP80P06T P channel MOSFET featuring fast switching and low level drive for electronics

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Product Description

Product Overview

The OSP80P06T is a -60V P-CHANNEL MOSFET from OSEN, designed for high efficiency and ruggedness. It features fast switching speeds, high input impedance, low level drive, and avalanche energy testing. This MOSFET is ideal for applications such as high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Publication Order Number: OSP80P06T
Revision: 21.2.10

Technical Specifications

Parameters	Symbol	Ratings	Unit	Conditions
Drain-Source Voltage	VDSS	-60	V
Gate-Source Voltage-Continuous	VGS	20	V
Drain Current-Continuous	ID	-80	A	Note 2
Drain Current-Single Pulsed	IDM	-160	A	Note 1
Power Dissipation	PD	160	W	Note 2
Max.Operating junction temperature	Tj Max.	150
Drain-Source Breakdown Voltage	BVDSS	-60	V	ID=-250AVGS=0VTJ=25C
Gate Threshold Voltage	VGS(th)	-1.1	V	VDS=VGS ID=-250A
Drain-Source On-Resistance	RDS(on)	17	m	VGS=-10VID=-20A
Gate-Body Leakage Current	IGSS	100	nA	VGS=20VVDS=0
Zero Gate Voltage Drain Current	IDSS	1	A	VDS=-60VVGS=0
Forward Transconductance	gfs	16	S	VDS=-30VID=-25A
Turn-On Delay Time	Tdon	15	ns	VDS=-30V ID=-25ARG=5Note 2
Rise Time	Tr	25	ns
Turn-Off Delay Time	Tdoff	95	ns
Fall Time	Tf	30	ns
Total Gate Charge	Qg	129	nC	VDS=-48V VGS=-10VID=-25ANote 2
Gate-Source Charge	Qgs	25	nC
Gate-Drain Charge	Qgd	22	nC
Input Capacitance	Ciss	7880	pF	VDS=-25VVGS=0f=1MHz
Output Capacitance	Coss	550	pF
Reverse Transfer Capacitance	Crss	450	pF
Diode Forward Current	IS	-80	A	Note 2
Diode Forward On-Voltage	VSD	-1.6	V	IS=-80AVGS=0
Thermal Resistance, Junction to Case	Rth(j-c)	0.78	/W