Electronic dual NPN transistor PAKER MMDT3904 plastic encapsulated with low cutoff current in SOT363

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Product Description

Product Overview

The MMDT3904 is a plastic-encapsulated dual NPN transistor in a SOT-363 package. It features epitaxial planar die construction, high stability, and high reliability. This complementary pair is suitable for various electronic applications.

Product Attributes

Brand:
Origin: Shenzhen, China
Package Type: SOT-363
Material: Epoxy UL: 94V-0
Certifications: Halogen free and RoHS compliant
Marking: K6N

Technical Specifications

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=10A,IE=0	60			V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=1mA,IB=0	40			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A,IC=0			5	V
Collector Cut-off Current	ICBO	VCB=30V,IE=0			50	nA
Emitter Cut-off Current	IEBO	VEB=5V,IC=0			50	nA
DC Current Gain	hFE(1)	VCE=1V,IC=0.1mA	40
	hFE(2)	VCE=1V,IC=1mA	70
	hFE(3)	VCE=1V,IC=10mA	100		300
	hFE(4)	VCE=1V,IC=50mA	60
	hFE(5)	VCE=1V,IC=100mA	30
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA,IB=1mA		0.2		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA,IB=5mA		0.3		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA,IB=1mA		0.65	0.85	V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA,IB=5mA			0.95	V
Transition Frequency	fT	VCE=20V,IC=10mA,f=100MHz		300		MHz
Switching Time	td	VCC=3V, VBE(off)=-0.5V, IC=10mA , IB1=-IB2= 1mA			35	nS
Switching Time	tr	VCC=3V, IC=10mA , IB1=-IB2= 1mA			35	nS
Switching Time	ts	VCC=3V, IC=10mA, IB1=-IB2=1mA			200	nS
Switching Time	tf	VCC=3V, IC=10mA, IB1=-IB2=1mA			50	nS