N Channel Enhancement Mode Power MOSFET PJSEMI PJM60N20TE with Trench Technology and RoHS Compliance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM60N20TE is an N-Channel Enhancement Mode Power MOSFET featuring advanced trench technology, 100% avalanche tested, and RoHS compliant. It is halogen and antimony free, with a moisture sensitivity level of 3. This MOSFET is ideal for load switch and PWM applications, as well as general power management.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Static Characteristics | V(BR)DSS | VGS=0V,ID=250A | 20 | -- | -- | V |
| IDSS | VDS=20V,VGS=0V | -- | -- | 1 | A | |
| IGSS | VGS=12V,VDS=0V | -- | -- | 100 | nA | |
| VGS(th) | VDS=VGS,ID=250A | 0.4 | 0.65 | 1 | V | |
| RDS(on) | VGS=4.5V,ID=25A | -- | 4.9 | 6 | m | |
| VGS=2.5V,ID=15A | -- | 6.8 | 8.5 | m | ||
| gFS | VDS=5V,ID=2A | -- | 11 | -- | S | |
| Dynamic Characteristics | Ciss | VDS=10V,VGS=0V,f=1MHz | -- | 1563 | -- | pF |
| Coss | VDS=10V,VGS=0V,f=1MHz | -- | 234 | -- | pF | |
| Crss | VDS=10V,VGS=0V,f=1MHz | -- | 213 | -- | pF | |
| Switching Characteristics | td(on) | VDD=10V, ID=20A, VGS=4.5V, RGEN=3 | -- | 12 | -- | nS |
| tr | VDD=10V, ID=20A, VGS=4.5V, RGEN=3 | -- | 33 | -- | nS | |
| td(off) | VDD=10V, ID=20A, VGS=4.5V, RGEN=3 | -- | 48 | -- | nS | |
| tf | VDD=10V, ID=20A, VGS=4.5V, RGEN=3 | -- | 95 | -- | nS | |
| Source-Drain Diode Characteristics | VSD | VGS=0V,IS=30A | -- | -- | 1.2 | V |
| IS | -- | -- | -- | 60 | A | |
| Absolute Maximum Ratings | VDS | -- | -- | -- | 20 | V |
| VGS | -- | -- | 12 | -- | V | |
| ID | -- | -- | -- | 60 | A | |
| Thermal Characteristics | RJC | -- | -- | 3.4 | -- | C/W |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina