High voltage N Channel MOSFET OSEN OSH20N65C 650V with tested avalanche energy and low level drive
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Product Description
Product Overview
The OSH20N65C is a 650V N-Channel MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive capability, and tested avalanche energy. Its improved dv/dt capability and high ruggedness make it suitable for demanding power supply and lighting applications.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSH20N65
- Revision: 21.2.10
- Package: TO-3PNB
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 650 | V | |
| VGS | Gate-Source Voltage-Continuous | ±30 | V | |
| ID | Drain Current-Continuous (Note 2) | 20 | A | Tc=25°C |
| IDM | Drain Current-Single Pulsed (Note 1) | 80 | A | |
| PD | Power Dissipation (Note 2) | 220 | W | Tc=25°C |
| Tj Max. | Operating junction temperature | 150 | °C | |
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | 650 | V | ID=250µA, VGS=0V, TJ=25°C |
| VGS(th) | Gate Threshold Voltage | 2.0 - 4.0 | V | VDS=VGS, ID=250µA |
| RDS(on) | Drain-Source On-Resistance | 0.35 | Ω | VGS=10V, ID=10A |
| IGSS | Gate-Body Leakage Current | ±100 | nA | VGS=±30V, VDS=0 |
| IDSS | Zero Gate Voltage Drain Current | 1 | µA | VDS=650V, VGS=0 |
| gfs | Forward Transconductance | 12.0 | S | VDS=30V, ID=10A |
| Td(on) | Turn-On Delay Time | 35 | ns | VDS=325V, ID=20A, RG=25Ω (Note 2) |
| Tr | Rise Time | 55 | ns | |
| Td(off) | Turn-Off Delay Time | 120 | ns | |
| Tf | Fall Time | 50 | ns | |
| Qg | Total Gate Charge | 70 | nC | VDS=480V, VGS=10V, ID=20A (Note 2) |
| Qgs | Gate-Source Charge | 19 | nC | |
| Qgd | Gate-Drain Charge | 28 | nC | |
| Ciss | Input Capacitance | 2500 | pF | VDS=25V, VGS=0, f=1MHz |
| Coss | Output Capacitance | 1280 | pF | |
| Crss | Reverse Transfer Capacitance | 90 | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | 20 | A | |
| VSD | Diode Forward On-Voltage | 1.3 | V | IS=10A, VGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | 0.57 | °C/W |
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