N Channel Power MOSFET PJSEMI PJM150N30TE with 150 Amp Drain Current and 30 Volt Voltage Rating
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Product Description
Product Overview
The PJM150N30TE is an N-Channel Enhancement Mode Power MOSFET featuring Advanced Trench Technology. It is 100% avalanche tested and RoHS compliant, making it a halogen and antimony-free option. This MOSFET is suitable for applications such as load switching, battery protection, and uninterruptible power supplies.
Product Attributes
- Brand: PJM (implied by product code)
- Certifications: RoHS Compliant, Halogen and Antimony Free, Moisture Sensitivity Level 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 150 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 600 | A | ||
| Maximum Power Dissipation | PD | 72 | W | |||
| Single pulse avalanche energy | EAS | Note2 | 182 | mJ | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 30 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note4, VDS=VGS,ID=250A | 1 | 1.6 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note4, VGS=10V,ID=30A | -- | 2.5 | 3.4 | m |
| Drain-Source On-Resistance | RDS(on) | Note4, VGS=4.5V,ID=20A | -- | 3.6 | 4.8 | m |
| Forward Transconductance | gFS | Note4, VDS=5V,ID=2A | -- | 13 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 3811 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 443 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 337 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 1.65 | -- | |
| Total Gate Charge | ||||||
| Total Gate Charge | Qg | VDS=30V, ID=15A, VGS=10V | -- | 67 | -- | nC |
| Gate-Source Charge | Qgs | VDS=30V, ID=15A, VGS=10V | -- | 11 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=30V, ID=15A, VGS=10V | -- | 19 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 19 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 50 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=30A, VGS=10V, RGEN=3 | -- | 20 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note4, VGS=0V,IS=30A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note3 | -- | -- | 150 | A |
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Sellina