Silicon FS Trench IGBT OSEN OGH25T120 with built-in fast recovery diode and high thermal stability
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Product Description
Product Overview
The OGH25T120 is a Silicon FS Trench IGBT designed for high-reliability applications. It offers reduced saturation pressure and fast switching speeds, making it easy to use in parallel configurations. Key features include high thermal stability and a built-in fast-recovery diode. This IGBT is suitable for use in frequency transformers, UPS systems, and inverter welding machines.
Product Attributes
- Brand: OSEN
- Publication Order Number: OGH25T120
- Revision: 21.2.10
- Package Type: TO-3PNB
Technical Specifications
| Parameter | Symbol | Rating | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Maximum collector-emitter DC voltage | VCES | 1200 | V | (Tc=25C) |
| Maximum gate-emitter DC voltage | VGES | ±20 | V | (Tc=25C) |
| Collector DC current | IDM | 25 | A | (Tc=25C) |
| Storage temperature range | Tstg | -55~150 | ||
| Max.Operating junction temperature | Tj | 150 | ||
| Electrical Characteristics | ||||
| Collector-emitter breakdown voltage | VCES | 1200 | V | VGE=0V, ICE=250uA |
| Collector drain current under zero gate pressure | ICES | -- | 1.0 | mA (VGE=0V,VCE=1200V) |
| Drain current of the gate body | IGES | -- | ±250 | nA (VGE=±20V) |
| Collector-emitter saturated pressure drop | VCE(sat) | -- | 1.95 / 2.5 | V (IC=25A ,VGE=15V) |
| Threshold voltage | VGE(th) | 4.5 / 5.8 / 7.5 | V | IC=250uA,VCE=VGE |
| Diode forward pressure drop | VFM | -- | 2.7 / 3.0 | V (IF=25A) |
| Switching Characteristics | ||||
| Turn-On Delay Time | Td(on) | -- | 34 | ns (VCE=600V,IC=25A, Rg=10,VGE=15V, Inductive Load,Ta=25) |
| Rise Time | Tr | -- | 36 | ns (VCE=600V,IC=25A, Rg=10,VGE=15V, Inductive Load,Ta=25) |
| Turn-Off Delay Time | Td(off) | -- | 198 | ns (VCE=600V,IC=25A, Rg=10,VGE=15V, Inductive Load,Ta=25) |
| Fall Time | Tf | -- | 175 | ns (VCE=600V,IC=25A, Rg=10,VGE=15V, Inductive Load,Ta=25) |
| Total Gate Charge | Qg | -- | 142 | nC (VCE=960V,IC=25A, VGE=15V) |
| Gate-Source Charge | Qgs | -- | 23 | nC (VCE=960V,IC=25A, VGE=15V) |
| Gate-Drain Charge | Qgd | -- | 75 | nC (VCE=960V,IC=25A, VGE=15V) |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | -- | 2375 | pF (VCE=25V,VGE=0V f=1MHz) |
| Output Capacitance | Coss | -- | 64 | pF (VCE=25V,VGE=0V f=1MHz) |
| Reverse Transfer Capacitance | Crss | -- | 47 | pF (VCE=25V,VGE=0V f=1MHz) |
| Reverse recovery time | Trr | -- | 200 | nS (IF=25A di/dt=200A/uS) |
| Thermal Resistance, Junction to Case | Rth(j-c) | -- | 0.55 | /W |
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