Compact dual transistor PAKER MMDT3906 featuring PNP epitaxial planar dies and halogen free packaging

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Product Description

Product Overview

The MMDT3906 is a SOT-363 plastic-encapsulated dual transistor package featuring two PNP epitaxial planar die constructions. It offers high stability and reliability, serving as a complementary pair to the 3904. This device is halogen-free and RoHS compliant.

Product Attributes

Brand: (Parker Microelectronics)
Origin: Shenzhen, China
Certifications: Halogen free, RoHS compliant, UL: 94V-0

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Breakdown Voltage	V(BR)CBO	IC=-10A, IE=0			-40	V
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=-1mA, IB=0			-40	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=-10A, IC=0			-5	V
Emitter Cut-off Current	IEBO	VEB=-5V, IC=0			-50	nA
Collector Cut-off Current	ICEX	VCE=-30V, VBE(off)=-3V			-50	nA
DC Current Gain	hFE(1)	VCE=-1V, IC=-0.1mA	60
	hFE(2)	VCE=-1V, IC=-1mA	80
	hFE(3)	VCE=-1V, IC=-10mA	100	300
	hFE(4)	VCE=-1V, IC=-50mA	60
	hFE(5)	VCE=-1V, IC=-100mA	30
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=-10mA, IB=-1mA		-0.25		V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=-50mA, IB=-5mA		-0.4		V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=-10mA, IB=-1mA		-0.65	-0.85	V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=-50mA, IB=-5mA			-0.95	V
Transition Frequency	fT	VCE=-20V, IC=-10mA, f=100MHz		250		MHz
Switching Characteristics	td	VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA		35		nS
Switching Characteristics	tr	VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-IB2=-1mA		35		nS
Switching Characteristics	ts	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA			225	nS
Switching Characteristics	tf	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA			75	nS