N Channel Power MOSFET PJSEMI PJM40N40TE with 40 Volt Drain Source Voltage and 40 Amp Drain Current
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Product Description
Product Overview
The PJM40N40TE is an N-Channel Enhancement Mode Power MOSFET from Pingjingsemi, featuring advanced trench technology for high performance and reliability. It is 100% avalanche tested and RoHS compliant, offering a VDS of 40V and ID of 40A with low on-resistance (RDS(on)
Product Attributes
- Brand: Pingjingsemi
- Model: PJM40N40TE
- Certifications: RoHS Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 40 | A | |||
| Drain Current-Pulsed | IDM | Note1 | 140 | A | ||
| Maximum Power Dissipation | PD | 28 | W | |||
| Single Pulse Avalanche Energy | EAS | Note2 | 39 | mJ | ||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | TSTG | -55 | +150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 4.5 | C/W | |||
| Electrical Characteristics (TJ=25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250A | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250A | 1.0 | 1.3 | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=20A | -- | 9.5 | 13 | m |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=10A | -- | 12.5 | 23 | m |
| Forward Transconductance | gFS | Note3, VDS=5V,ID=2A | -- | 8.5 | -- | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V,VGS=0V,f=1MHz | -- | 1178 | -- | pF |
| Output Capacitance | Coss | VDS=20V,VGS=0V,f=1MHz | -- | 91 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V,f=1MHz | -- | 83 | -- | pF |
| Gate Resistance | Rg | VDS=0V,VGS=0V,f=1MHz | -- | 1.1 | -- | |
| Total Gate Charge | Qg | VDS=20V, ID=20A, VGS=10V | -- | 23.6 | -- | nC |
| Gate-Source Charge | Qgs | VDS=20V, ID=20A, VGS=10V | -- | 4.4 | -- | nC |
| Gate-Drain Charge | Qg | VDS=20V, ID=20A, VGS=10V | -- | 6.3 | -- | nC |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | VDD=20V,ID=2A,RL=3, VGS=10V,RGEN=3 | -- | 10 | -- | nS |
| Turn-on Rise Time | tr | VDD=20V,ID=2A,RL=3, VGS=10V,RGEN=3 | -- | 56 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=20V,ID=2A,RL=3, VGS=10V,RGEN=3 | -- | 27 | -- | nS |
| Turn-off Fall Time | tf | VDD=20V,ID=2A,RL=3, VGS=10V,RGEN=3 | -- | 72 | -- | nS |
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=20A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | -- | -- | 40 | A | |
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