silicon carbide fet onsemi UF4C120070K4S 1200 volt to 247 4l package suitable for pv inverters and power factor correction
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Product Description
Product Overview
The UF4C120070K4S is a 1200 V, 72 m SiC FET designed for high-performance power applications. It utilizes a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device offers ultra-low gate charge, exceptional reverse recovery, and is ideal for switching inductive loads. It is available in a TO-247-4L package for faster switching and cleaner gate waveforms.Key Applications:
- EV Charging
- PV Inverters
- Switch Mode Power Supplies
- Power Factor Correction Modules
- Motor Drives
- Induction Heating
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Package: TO-247-4L
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
|---|---|---|---|---|
| Drain-source Breakdown Voltage | BVDS | VGS = 0 V, ID = 1 mA | 1200 | V |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 25 C | 0.4 | A |
| Total Drain Leakage Current | IDSS | VDS = 1200 V, VGS = 0 V, TJ = 175C | 10 | A |
| Total Gate Leakage Current | IGSS | VDS = 0 V, TJ = 25 C, VGS = -20 V / +20 V | 6 / 20 | nA |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 25C | 72 (typ) | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 125C | 140 (typ) | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 175C | 197 (typ) | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4.8 (typ) | V |
| Diode Continuous Forward Current | IS | TC = 25 C | 27.5 | A |
| Forward Voltage | VFSD | VGS = 0 V, IS = 10 A, TJ = 25 C | 1.43 (typ) | V |
| Reverse Recovery Charge | Qrr | VDS = 800 V, IS = 20 A, VGS = 0 V, RG = 20 , di/dt = 1600 A/s, TJ = 25 C | 119 | nC |
| Input Capacitance | Ciss | VDS = 800 V, VGS = 0 V, f = 100 kHz | 1370 (typ) | pF |
| Output Capacitance | Coss | VDS = 800 V, VGS = 0 V, f = 100 kHz | 35 (typ) | pF |
| Reverse Transfer Capacitance | Crss | VDS = 800 V, VGS = 0 V, f = 100 kHz | 2 (typ) | pF |
| Total Gate Charge | QG | VDS = 800 V, ID = 20 A, VGS = 0 V to 15 V | 37.8 (typ) | nC |
| On-resistance | RDS(on) | 72 m (typ) | 72 | m |
| Operating Temperature | max | 175 C | C | |
| ESD Protected | HBM Class 2 and CDM Class C3 |
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