Complementary N Channel and P Channel power MOSFET PJSEMI PJM06C40PA for electronic power management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The PJM06C40PA is a complementary N-Channel and P-Channel Power MOSFET designed for power management applications. It features advanced trench technology, 100% avalanche testing, and is RoHS and Reach compliant, making it a reliable choice for various electronic designs.
Product Attributes
- Brand: PingJingSemi
- Certifications: RoHS, Reach Compliant, Halogen and Antimony Free
- Moisture Sensitivity Level: 3
Technical Specifications
| Parameter | Symbol | N-Channel Test Condition | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Test Condition | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit | |
| Drain-Source Voltage | VDS | 40 | V | -40 | V | |||||||
| Gate-Source Voltage | VGS | ±20 | V | ±20 | V | |||||||
| Drain Current-Continuous | ID | 6.5 | A | -6 | A | |||||||
| Drain Current-Pulsed | IDM | Note1 | 23 | A | Note1 | -22 | A | |||||
| Maximum Power Dissipation | PD | 1.67 | W | 1.67 | W | |||||||
| Junction Temperature | TJ | 150 | °C | 150 | °C | |||||||
| Storage Temperature Range | TSTG | -55 to +150 | °C | -55 to +150 | °C | |||||||
| Thermal Resistance, Junction-to-Ambient | RθJA | Note2 | 75 | °C/W | Note2 | 75 | °C/W | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID=250μA | 40 | -- | -- | V | -V(BR)DSS | VGS=0V,ID=-250μA | 40 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | -- | -- | 1 | μA | -IDSS | VDS=-40V,VGS=0V | -- | -- | 1 | μA |
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA | IGSS | VGS=±20V,VDS=0V | -- | -- | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | Note3, VDS=VGS,ID=250μA | 1 | -- | 2.5 | V | -VGS(th) | Note3, VDS=VGS,ID=-250μA | 1 | -- | 2.5 | V |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=10V,ID=4A | -- | -- | 40 | mΩ | RDS(on) | Note3, VGS=-10V,ID=-3A | -- | -- | 75 | mΩ |
| Drain-Source On-Resistance | RDS(on) | Note3, VGS=4.5V,ID=3A | -- | -- | 60 | mΩ | RDS(on) | Note3, VGS=-4.5V,ID=-2A | -- | -- | 100 | mΩ |
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHz | -- | 452 | -- | pF | Ciss | VDS=-15V,VGS=0V,f=1MHz | -- | 620 | -- | pF |
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHz | -- | 51 | -- | pF | Coss | VDS=-15V,VGS=0V,f=1MHz | -- | 65 | -- | pF |
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHz | -- | 38 | -- | pF | Crss | VDS=-15V,VGS=0V,f=1MHz | -- | 53 | -- | pF |
| Total Gate Charge | Qg | VDS=15V,ID=3A, VGS=4.5V | -- | 5 | -- | nC | Qg | VDS=-32V, ID=-3A, VGS=-4.5V | -- | 6.4 | -- | nC |
| Gate-Source Charge | Qgs | VDS=15V,ID=3A, VGS=4.5V | -- | 1.54 | -- | nC | Qgs | VDS=-32V, ID=-3A, VGS=-4.5V | -- | 2.1 | -- | nC |
| Gate-Drain Charge | Qgd | VDS=15V,ID=3A, VGS=4.5V | -- | 1.84 | -- | nC | Qgd | VDS=-32V, ID=-3A, VGS=-4.5V | -- | 2.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=15V, ID=1A, VGS=10V, RGEN=3.3Ω | -- | 7.8 | -- | nS | td(on) | VDD=-20V,ID=-3A, VGS=-4.5V, RGEN=3.3Ω | -- | 4.2 | -- | nS |
| Turn-on Rise Time | tr | VDD=15V, ID=1A, VGS=10V, RGEN=3.3Ω | -- | 2.1 | -- | nS | tr | VDD=-20V,ID=-3A, VGS=-4.5V, RGEN=3.3Ω | -- | 23 | -- | nS |
| Turn-off Delay Time | td(off) | VDD=15V, ID=1A, VGS=10V, RGEN=3.3Ω | -- | 29 | -- | nS | td(off) | VDD=-20V,ID=-3A, VGS=-4.5V, RGEN=3.3Ω | -- | 26.8 | -- | nS |
| Turn-off Fall Time | tf | VDD=15V, ID=1A, VGS=10V, RGEN=3.3Ω | -- | 2.1 | -- | nS | tf | VDD=-20V,ID=-3A, VGS=-4.5V, RGEN=3.3Ω | -- | 20.6 | -- | nS |
| Diode Forward Voltage | VSD | Note3, VGS=0V,IS=6.5A | -- | -- | 1.2 | V | -VSD | Note3, VGS=0V,IS=-6A | -- | -- | 1.2 | V |
| Diode Forward Current | IS | Note2 | -- | -- | 6.5 | A | -IS | Note2 | -- | -- | 6 | A |
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