P Channel Enhancement Transistor PJSEMI PJM3407PSA Designed for Power Switching and Load Control

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Product Description

PJM3407PSA P-Channel Enhancement Field Effect Transistor

The PJM3407PSA is a P-channel enhancement mode field-effect transistor designed with a high-density cell structure for ultra-low on-resistance (RDS(on)). It offers low gate charge and is suitable for load switch and PWM applications. Key features include VDS=-30V, ID=-4.1A, and RDS(on)=50m (Typ.)@VGS=-10V.

Product Attributes

Brand: Pingjingsemi
Product Code: PJM3407PSA
Package: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Absolute Maximum Ratings
Drain-Source Voltage	-VDS				30	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current	-ID				4.1	A
Power Dissipation	PD				1.4	W
Junction and Storage Temperature Range	TJ, TSTG		-55 to 150		150	°C
Thermal Characteristics
Maximum Junction-to-Ambient	RθJA	Note1		89		°C/W
Static Characteristics
Drain-source breakdown voltage	-V(BR)DSS	VGS = 0V, ID =-250µA	30			V
Zero gate voltage drain current	-IDSS	VDS =-24V,VGS = 0V			1	µA
Gate-source leakage current	IGSS	VGS =±20V, VDS = 0V			±100	nA
Drain-source on-resistance	RDS(on)	VGS =-10V, ID =-4.1A		50	60	mΩ
Drain-source on-resistance	RDS(on)	VGS =-4.5V, ID =-3A		68	87	mΩ
Gate threshold voltage	-VGS(th)	VDS =VGS, ID =-250µA	1	1.4	3	V
Dynamic Characteristics
Input capacitance	Ciss	VDS =-15V,VGS =0V,f =1MHz		700		pF
Output capacitance	Coss			120		pF
Reverse transfer capacitance	Crss			75		pF
Switching Characteristics
Turn-on delay time	td(on)	VGS=-10V,VDS=-15V, RL=3.6Ω,RGEN=3Ω		8.6		ns
Turn-on rise time	tr			5.0		ns
Turn-off delay time	td(off)			28.2		ns
Turn-off fall time	tf			13.5		ns
Source-Drain Diode Characteristics
Diode forward voltage	VSD	IS=-1A,VGS=0V		-1		V
Forward tranconductance	gFS	VDS =-5V, ID =-4A		5.5		S