N Channel Enhancement Mode Power MOSFET PAKER AO3400 with Ultra Low On Resistance in SOT 23 Package
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The AO3400 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 small outline plastic package. It features a high-density cell design for ultra-low on-resistance, utilizing advanced trench process technology. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand:
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| Electrical Characteristics | Drain-Source Breakdown Voltage (BVDSS) | 30 | -- | -- | V | |
| Gate-Body Leakage Current (IGSS) | -- | -- | ±100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | 0.65 | 0.9 | 1.5 | V | ||
| RDS(on) | VGS=10V, ID=5.8A | -- | 21 | 27 | mΩ | |
| VGS=4.5V, ID=5.0A | -- | 27 | 33 | mΩ | ||
| VGS=2.5V, ID=4.0A | -- | 33 | 51 | mΩ | ||
| Capacitance | Input Capacitance (CISS) | -- | 632 | -- | pF | |
| Output Capacitance (COSS) | -- | 58 | -- | pF | ||
| Reverse Transfer Capacitance (CRSS) | -- | 70 | -- | pF | ||
| Dynamic Electrical Characteristics | Total Gate Charge (Qg) | -- | 17.3 | -- | nC | |
| Gate Source Charge (Qgs) | -- | 2.2 | -- | nC | ||
| Gate Drain Charge (Qgd) | -- | 2.1 | -- | nC | ||
| Switching Characteristics (VDD=15V, ID=5.8A, VGS=10V, RG=3Ω) | -- | -- | -- | -- | ||
| td(on) | Turn-on Delay Time | -- | 4.4 | -- | nS | |
| tr | Turn-on Rise Time | -- | 28.3 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 16.5 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 26.3 | -- | nS | |
| Source-Drain Diode Characteristics | Forward on voltage (VSD) | -- | -- | 1.2 | V | |
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | -- | -- | 1 | µA | |
| Maximum Ratings | Gate-Source Voltage (VGS) | ±12 | V | |||
| Diode Continuous Forward Current (IS) | TC=25°C | 5.8 | A | |||
| Drain-Source Breakdown Voltage (BVDSS) | 30 | V | ||||
| Maximum Junction Temperature (TJ) | 150 | °C | ||||
| Storage Temperature Range (TSTG) | -50 | 155 | °C | |||
| Pulse Drain Current (IDM) | TC=25°C | 23 | A | |||
| Continuous Drain Current (ID) | TC=25°C, VGS=10V | 5.8 | A | |||
| Power Dissipation | Maximum Power Dissipation (PD) | TC=25°C | 1.2 | W | ||
| Thermal Resistance Junction-Ambient (RθJA) | (*1 in² Pad of 2-oz Copper), Max. | 104 | °C/W |
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