N Channel Enhancement Mode MOSFET PAKER SI2304 with Trench Process and RoHS Compliant Small Package
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SI2304 is a N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and comes in a standard SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand: Pakermicro ()
- Origin: Shenzhen, China
- Package Type: SOT-23 Small Outline Plastic Package
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Packing Quantity: 3000 per 7" reel
- Packing Description: Tape/Reel, EIA-481-1
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | Diode Continuous Forward Current | Tc=25C | 3.3 | A | ||
| Drain-Source Breakdown Voltage | 30 | V | ||||
| Maximum Junction Temperature | 150 | C | ||||
| Storage Temperature Range | -55 | 150 | C | |||
| Pulse Drain Current | Tested Tc=25C | 13 | A | |||
| Electrical Characteristics | Continuous Drain Current | @GS=10V Tc=25C | 3.3 | A | ||
| Maximum Power Dissipation | Tc=25C | 1 | W | |||
| Thermal Resistance Junction-Ambient | ((*1 in2 Pad of 2-oz Copper), Max.) | 125 | C/W | |||
| Gate Threshold Voltage | VDS=VGSID=250A | 1 | 2.2 | V | ||
| Drain-Source On-State Resistance | VGS=4.5VID=2A | 32 | 48 | m | ||
| Zero Gate Voltage Drain Current | VDS=30VVGS=0V | 1 | uA | |||
| Gate-Body Leakage Current | VGS=20VVDS=0V | 100 | nA | |||
| Dynamic Electrical Characteristics | Input Capacitance | VDS=15VVGS=0V f=1MHz | 390 | pF | ||
| Output Capacitance | 67 | pF | ||||
| Reverse Transfer Capacitance | 41 | pF | ||||
| Total Gate Charge | VDS=15VID=3A VGS=10V | 4.2 | nC | |||
| Gate Source Charge | 1 | nC | ||||
| Gate Drain Charge | 1.1 | nC | ||||
| Source- Drain Diode Characteristics | Forward on voltage | Tj=25Is=3A | 1.2 | V |
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