750V 44mW Silicon Carbide FET Qorvo UJ4C075044K3S TO247 Package for Power Conversion and Motor Control
Silicon Carbide Field-Effect Transistor (SiC FET) - UJ4C075044K3S
Product Overview
The UJ4C075044K3S is a 750V, 44mW G4 SiC FET designed for high-performance power applications. It utilizes a unique 'cascode' circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. This design offers standard gate-drive characteristics, enabling it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge, exceptional reverse recovery characteristics, and low on-resistance, making it ideal for switching inductive loads and applications requiring standard gate drive. It is particularly well-suited for power factor correction modules, motor drives, induction heating, EV charging, switch mode power supplies, and PV inverters.
Product Attributes
- Brand: UnitedSiC
- Material: Silicon Carbide (SiC) / Silicon (Si)
- Package Type: TO-247-3L
- ESD Protection: HBM class 2, CDM class C3
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Units |
|---|---|---|---|---|
| Drain-source breakdown voltage | BVDS | VGS=0V, ID=1mA | 750 | V |
| Drain-source on-resistance | RDS(on) | VGS=12V, ID=25A, TJ=25C | 44 | mW (typ) |
| VGS=12V, ID=25A, TJ=175C | 56 | mW (typ) | ||
| Gate threshold voltage | VG(th) | VDS=5V, ID=10mA | 4.8 | V (typ) |
| Total gate charge | QG | VDS=400V, ID=25A, VGS = 0V to 15V | 37.8 | nC (typ) |
| Reverse recovery charge | Qrr | VR=400V, IS=25A, VGS=0V, RG_EXT=5W, di/dt=1200A/ms, TJ=25C | 67 | nC (typ) |
| Low body diode Forward Voltage | VFSD | VGS=0V, IS=10A, TJ=25C | 1.2 | V (typ) |
| Maximum junction temperature | TJ,max | 175 | C | |
| Operating and storage temperature | TJ, TSTG | -55 to 175 | C | |
| Thermal resistance, junction-to-case | RJC | 0.57 | C/W (typ) | |
| Power dissipation | Ptot | TC = 25C | 203 | W |
| Continuous drain current | ID | TC = 25C | 37.4 | A |
| Pulsed drain current | IDM | TC = 25C | 110 | A |
| Single pulsed avalanche energy | EAS | L=15mH, IAS =2.1A | 33 | mJ |
| SiC FET dv/dt ruggedness | dv/dt | VDS [ 500V | 200 | V/ns |
| Input capacitance | Ciss | VDS=400V, VGS=0V, f=100kHz | 1400 | pF (typ) |
| Output capacitance | Coss | VDS=400V, VGS=0V, f=100kHz | 55 | pF (typ) |
| Reverse transfer capacitance | Crss | VDS=400V, VGS=0V, f=100kHz | 2.5 | pF (typ) |
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