N Channel Enhancement Mode Power MOSFET with High Density Cell Design PAKER SI2328 in SOT 23 Package
Price:
Negotiable
MOQ:
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Delivery Time:
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Product Description
Product Overview
The SI2328 is an N-Channel Enhancement Mode Power MOSFET from Parker Microelectronics, designed for high-density cell applications. It features an ultra-low on-resistance due to its advanced trench process technology and high-density cell design. This MOSFET is housed in a SOT-23 small outline plastic package, making it suitable for various electronic applications.
Product Attributes
- Brand: Parker Microelectronics ()
- Origin: Shenzhen, China
- Package Type: SOT-23
- Material: Epoxy UL:94V-0
- Certifications: Halogen free and RoHS compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 100 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=100VVGS=0V | -- | 1.0 | uA | |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | 100 | nA | |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 1.0 | 1.8 | 2.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=1A | -- | 250 | 280 | m |
| VGS=10V ID=2A | -- | 280 | 310 | m | ||
| CISS | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 387 | -- | pF |
| -- | 30 | -- | pF | |||
| -- | 28 | -- | pF | |||
| Qg | Total Gate Charge | VDS=50VID=2A VGS=10V | -- | 9.5 | -- | nC |
| -- | 1.8 | -- | nC | |||
| -- | 2 | -- | nC | |||
| Switching Characteristics | Turn-on Delay Time | VDS=50VID=1.3A VGS=10VRG=1 | -- | 4 | -- | nS |
| Turn-on Rise Time | -- | 17.5 | -- | nS | ||
| Turn-Off Delay Time | -- | 13 | -- | nS | ||
| Turn-Off Fall Time | -- | 28 | -- | nS | ||
| VSD | Source- Drain Diode Forward on voltage | Tj=25Is=2A | -- | -- | 1.2 | V |
| IS | Diode Continuous Forward Current | -- | -- | 2 | -- | A |
| IDM | Pulse Drain Current | -- | -- | 9 | -- | A |
| ID | Continuous Drain Current@GS=10V | Tc=25C | -- | 2 | -- | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | 1.3 | -- | W |
| RJA | Thermal Resistance Junction-Ambient | ((*1 in2 Pad of 2-oz Copper), Max.) | -- | 96 | -- | C/W |
| VGS | Gate-Source Voltage | -- | -50 | -- | 155 | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 155 | C |
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