Paker SI2305 P Channel Enhancement Mode MOSFET with Ultra Low On Resistance and Halogen Free Package
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SI2305 is a P-Channel Enhancement Mode Power MOSFET designed for high-density applications. It features an advanced trench process technology for ultra-low on-resistance and is housed in a standard SOT-23 small outline plastic package. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications.
Product Attributes
- Brand: (Paker Microelectronics)
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: Epoxy UL: 94V-0, Halogen free and RoHS compliant
- Packing: Tape/Reel, 7" reel, 3000 pcs per reel, EIA-481-1 compliant
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA = 25°C | -4.1 | A | ||
| Pulsed Drain Current | IDM | 1) | -15 | A | ||
| Maximum Power Dissipation | PD | TA = 25°C | 1.25 | W | ||
| Maximum Power Dissipation | PD | TA = 75°C | 0.8 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 3) Surface Mounted on FR4 Board, t ≤ 5 sec. | 166 | °C/W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | RthJA | 2) Surface Mounted on FR4 Board. | 100 | °C/W | ||
| Electrical Characteristics | ||||||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -20 | V | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -4.1A | 46 | 52 | mΩ | |
| Drain-Source On-State Resistance | RDS(on) | VGS = -2.5V, ID = -3.0A | 60 | 75 | mΩ | |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250uA | 0.4 | 1 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = 0V | -1 | µA | ||
| Gate Body Leakage | IGSS | VGS = ±12V, VDS = 0V | ±100 | nA | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -3.5A | 6.5 | S | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = -4.5V, ID = -3.5A | 5.8 | mΩ | ||
| Input Capacitance | Ciss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 415 | pF | ||
| Output Capacitance | Coss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 223 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = -6V, VGS = 0V, f = 1.0 MHz | 87 | pF | ||
| Total Gate Charge | Qg | VDS = -6V, ID = -3.5A, VGS = -4.5V | 10 | nC | ||
| Gate-Source Charge | Qgs | VDS = -6V, ID = -3.5A, VGS = -4.5V | 0.85 | nC | ||
| Gate-Drain Charge | Qgd | VDS = -6V, ID = -3.5A, VGS = -4.5V | 1.7 | nC | ||
| Turn-On Delay Time | td(on) | VDD = -6V, RL=6Ω, ID = -1.A, VGEN = -4.5V, RG = 6Ω | 13 | 25 | ns | |
| Turn-On Rise Time | tr | VDD = -6V, RL=6Ω, ID = -1.A, VGEN = -4.5V, RG = 6Ω | 36 | 60 | ns | |
| Turn-Off Delay Time | td(off) | VDD = -6V, RL=6Ω, ID = -1.A, VGEN = -4.5V, RG = 6Ω | 42 | 70 | ns | |
| Turn-Off Fall Time | tf | VDD = -6V, RL=6Ω, ID = -1.A, VGEN = -4.5V, RG = 6Ω | 34 | 60 | ns | |
| Max. Diode Forward Current | IS | -1.6 | A | |||
| Diode Forward Voltage | VSD | IS = -1.6A, VGS = 0V | -0.8 | -1.2 | V | |
| Notes: 1) Pulse width limited by maximum junction temperature. 2) Surface Mounted on FR4 Board. 3) Surface Mounted on FR4 Board, t ≤ 5 sec. | ||||||
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