SOT23 Package NChannel Power MOSFET PAKER AO3402 Offering Low Gate Threshold Voltage and Performance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The AO3402 is a high-performance N-Channel Enhancement Mode Power MOSFET designed for various applications. It features a small outline SOT-23 plastic package, advanced trench process technology, and a high-density cell design for ultra-low on-resistance. This MOSFET is halogen-free and RoHS compliant, making it suitable for environmentally conscious designs.
Product Attributes
- Brand: Paker Microelectronics (Shenzhen) Co., Ltd.
- Origin: China
- Package: SOT-23
- Certifications: UL: 94V-0, Halogen free and RoHS compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Static Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 0.65 | -- | 1.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=10V ID=4A | -- | 33 | 38 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=3A | -- | 47 | -- | m |
| IDSS | Zero Gate Voltage Drain Current | VDS=30VVGS=0V | -- | -- | 1 | A |
| IGSS | Gate-Body Leakage Current | VGS=12VVDS=0V | -- | 100 | -- | nA |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| CISS | Input Capacitance | VDS=15VVGS=0V f=1MHz | -- | 285 | -- | pF |
| COSS | Output Capacitance | VDS=15VVGS=0V f=1MHz | -- | 33 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=15VVGS=0V f=1MHz | -- | 27 | -- | pF |
| td(on) | Turn-on Delay Time | VDD=15VID=2A VGS=4.5V RG=3 | -- | 2.6 | -- | nC |
| tr | Turn-on Rise Time | VDD=15VID=2A VGS=4.5V RG=3 | -- | -- | -- | -- |
| td(off) | Turn-Off Delay Time | VDD=15VID=2A VGS=4.5V RG=3 | -- | 0.6 | -- | nC |
| tf | Turn-Off Fall Time | VDD=15VID=2A VGS=4.5V RG=3 | -- | -- | -- | -- |
| Qg | Total Gate Charge | VDS=15VID=4A VGS=4.5V | -- | 15 | -- | nS |
| Qgs | Gate Source Charge | VDS=15VID=4A VGS=4.5V | -- | 42 | -- | nS |
| Qgd | Gate Drain Charge | VDS=15VID=4A VGS=4.5V | -- | 16 | -- | nS |
| Source- Drain Diode Characteristics | ||||||
| VSD | Forward on voltage | Tj=25Is=4A | -- | 0.9 | -- | V |
| Maximum Ratings & Thermal Characteristics | ||||||
| PD | Maximum Power Dissipation | Tc=25C | -- | -- | 1.2 | W |
| RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | -- | 104 | -- | C/W |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 19 | A |
| ID | Continuous Drain Current | Tc=25C | -- | -- | 4 | A |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 155 | C |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -- | 4 | A |
| Common Ratings (TC=25C Unless Otherwise Noted) | ||||||
| VDS | Drain-Source Breakdown Voltage | -- | 30 | -- | -- | V |
| VGS | Gate-Source Voltage | -- | -- | -- | 12 | V |
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