Epitaxial Silicon PNP Transistor PANJIT MMBT2907AW R1 00001 with Green Molded Compound and Lead Free
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Delivery Time:
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Product Description
MMBT2907AW PNP General Purpose Switching Transistor
The MMBT2907AW is a PNP epitaxial silicon, planar design general purpose switching transistor designed for various electronic applications. It offers lead-free compliance with EU RoHS2.0 directives and utilizes a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Material: Epitaxial Silicon, Planar Design
- Color: Green (Molding Compound)
- Certifications: EU RoHS2.0 (2011/65/EU & 2015/865/EU), IEC61249 Std. (Halogen Free)
Technical Specifications
| Parameter | Symbol | Min | Max | Unit | Conditions |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | V | ||
| Collector Current | IC | -600 | mA | ||
| Collector-Emitter Voltage | VCE | -60 | V | ||
| Collector Current | IC | -600 | mA | ||
| Power Dissipation | PD | 225 | mW | (Note 1) | |
| Storage Temperature | TSTG | -55 | 150 | C | |
| Junction Temperature | TJ | -55 | 150 | C | |
| Thermal Resistance, Junction to Ambient | RJA | 655 | C/W | (Note 1) | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | V | IC = -10mA, IB = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IE = 0, IC = -10A | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5.0 | V | IC = 0, IE = -10A | |
| Collector Cut-off Current | ICBO | -50 | nA | VCE = -30V, VEB = -5.0V | |
| Collector Cut-off Current | ICEX | -50 | nA | VCE = -30V, VEB = -5.0V | |
| Base Cut-off Current | IBO | -10 | nA | VCE = -50V, IE = 0 | |
| DC Current Gain | hFE | 10 | IC = -10mA, VCE = -10V | ||
| DC Current Gain | hFE | 10 | IC = -100mA, VCE = -10V | ||
| DC Current Gain | hFE | 10 | IC = -500mA, VCE = -10V | ||
| DC Current Gain | hFE | 5 | IC = -10mA, VCE = -10V | ||
| DC Current Gain | hFE | 5 | IC = -100mA, VCE = -10V | ||
| DC Current Gain | hFE | 5 | IC = -500mA, VCE = -10V | ||
| DC Current Gain | hFE | 3 | IC = -10mA, VCE = -10V | ||
| DC Current Gain | hFE | 3 | IC = -100mA, VCE = -10V | ||
| DC Current Gain | hFE | 3 | IC = -500mA, VCE = -10V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | V | IC = -150mA, IB = -15mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.6 | V | IC = -500mA, IB = -50mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | V | IC = -150mA, IB = -15mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.5 | V | IC = -500mA, IB = -50mA | |
| Turn-On Time | ton | 50 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA | |
| Turn-Off Time | toff | 100 | ns | VCC = -30V, IC = -150mA, IB1 = -15mA, IB2 = 15mA | |
| Output Capacitance | Cobo | 8.0 | pF | VCB = -10V, f = 1.0MHz | |
| Input Capacitance | Cibo | 30 | pF | VBE = -2.0V, f = 1.0MHz | |
| Collector-Base Capacitance | Ccbo | 7.0 | pF | VCB = -10V, f = 1.0MHz | |
| Current-Gain-Bandwidth Product | fT | 200 | MHz | IC = -50mA, VCE = -10V | |
| Noise Figure | NF | 10 | dB | IC = -0.1mA, VCE = -5V, RG = 430, f = 1.0kHz | |
| Noise Figure | NF | 10 | dB | IC = -0.1mA, VCE = -5V, RG = 560, f = 1.0kHz | |
| Noise Figure | NF | 10 | dB | IC = -0.5mA, VCE = -5V, RG = 2.7k, f = 1.0kHz | |
| Noise Figure | NF | 10 | dB | IC = -1.0mA, VCE = -5V, RG = 1.6k, f = 1.0kHz | |
| On Voltage | VBE(on) | -0.7 | V | IC = -1.0mA, VCE = -10V | |
| On Voltage | VBE(on) | -0.8 | V | IC = -10mA, VCE = -10V | |
| On Voltage | VBE(on) | -1.0 | V | IC = -100mA, VCE = -10V | |
| Temperature Coefficient | VBE/T | -2.0 | mV/C | IC = -1.0mA, VCE = -10V | |
| Temperature Coefficient | VBE/T | -2.0 | mV/C | IC = -10mA, VCE = -10V | |
| Temperature Coefficient | VBE/T | -2.0 | mV/C | IC = -100mA, VCE = -10V |
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