N Channel Power MOSFET ORIENTAL SEMI OSG60R580FTF Featuring Low Gate Charge and Robust Avalanche Capability
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Product Description
Product Overview
The OSG60R580FTF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. This high-voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge, engineered to minimize conduction and switching losses. It offers superior switching performance and robust avalanche capability, making it ideal for high power density applications requiring the highest efficiency standards. Key applications include PC power, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package Type: TO220F
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS, min @ Tj(max) | 650 | V | |
| Pulse drain current | ID, pulse | 24 | A | |
| RDS(ON) (max @ VGS=10V) | RDS(ON) , max @ VGS=10V | 580 | m | |
| Total gate charge | Qg | 8.7 | nC | |
| Drain-source voltage | VDS | 600 | V | Tj=25C unless otherwise noted |
| Gate-source voltage | VGS | 30 | V | Tj=25C unless otherwise noted |
| Continuous drain current (TC=25 C) | ID | 8 | A | TC=25 C |
| Continuous drain current (TC=100 C) | ID | 5 | A | TC=100 C |
| Continuous diode forward current (TC=25 C) | IS | 8 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 26 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 125 | mJ | Tj=25 C |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0480 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0480 V, ISDID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | |
| Thermal resistance, junction-case | RJC | 4.81 | C/W | |
| Thermal resistance, junction-ambient | RJA | 62.5 | C/W | Measured on 1 in 2 FR-4 board with 2oz. Copper, still air environment, Ta=25 C |
| Drain-source breakdown voltage | BVDSS | 600 | V | VGS=0 V, ID=250 A |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 A |
| Drain-source on- state resistance | RDS(ON) | 0.5 - 0.58 | VGS=10 V, ID=4 A | |
| Gate-source leakage current | IGSS | 100 | nA | VGS=30 V |
| Drain-source leakage current | IDSS | 10 | A | VDS=600 V, VGS=0 V |
| Input capacitance | Ciss | 410.8 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 41.7 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 3.1 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 26.4 | ns | VGS=10 V, VDS=400 V, RG=3 , ID=4 A |
| Rise time | tr | 17.9 | ns | VGS=10 V, VDS=400 V, RG=3 , ID=4 A |
| Turn-off delay time | td(off) | 56.2 | ns | VGS=10 V, VDS=400 V, RG=3 , ID=4 A |
| Fall time | tf | 14 | ns | VGS=10 V, VDS=400 V, RG=3 , ID=4 A |
| Total gate charge | Qg | 8.7 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate-source charge | Qgs | 2.2 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate-drain charge | Qgd | 3.8 | nC | VGS=10 V, VDS=400 V, ID=4 A |
| Gate plateau voltage | Vplateau | 5.7 | V | VGS=10 V, VDS=400 V, ID=4 A |
| Diode forward voltage | VSD | 1.3 | V | IS=15 A, VGS=0 V |
| Reverse recovery time | trr | 214.3 | ns | VR=400V, IS=4 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.7 | C | VR=400V, IS=4 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 16.1 | A | VR=400V, IS=4 A, di/dt=100 A/s |
| Product Name | OSG60R580FTF | TO220F |
TO220F Package Outline Dimensions (Version 1):
| Symbol | mm (Min) | mm (Nom) | mm (Max) |
|---|---|---|---|
| E | 9.96 | 10.16 | 10.36 |
| A | 4.50 | 4.70 | 4.90 |
| A1 | 2.34 | 2.54 | 2.74 |
| A4 | 2.56 | 2.76 | 2.96 |
| c | 0.40 | 0.50 | 0.65 |
| D | 15.57 | 15.87 | 16.17 |
| H1 | 6.70REF | ||
| e | 2.54BSC | ||
| L | 12.68 | 12.98 | 13.28 |
| L1 | 2.88 | 3.03 | 3.18 |
| P | 3.03 | 3.18 | 3.38 |
| P3 | 3.15 | 3.45 | 3.65 |
| F3 | 3.15 | 3.30 | 3.45 |
| G3 | 1.25 | 1.35 | 1.55 |
| b1 | 1.18 | 1.28 | 1.43 |
| b2 | 0.70 | 0.80 | 0.95 |
TO220F-J Package Outline Dimensions (Version 2):
| Symbol | mm (Min) | mm (Nom) | mm (Max) |
|---|---|---|---|
| A | 4.50 | 4.70 | 4.83 |
| A1 | 2.34 | 2.54 | 2.74 |
| A2 | 0.70 REF | ||
| A3 | 2.56 | 2.76 | 2.93 |
| b | 0.70 | - | 0.90 |
| b1 | 1.18 | - | 1.38 |
| b2 | - | - | 1.47 |
| c | 0.45 | 0.50 | 0.60 |
| D | 15.67 | 15.87 | 16.07 |
| D1 | 15.55 | 15.75 | 15.95 |
| D2 | 9.60 | 9.80 | 10.00 |
| E | 9.96 | 10.16 | 10.36 |
| e | 2.54 BSC | ||
| H1 | 6.48 | 6.68 | 6.88 |
| L | 12.68 | 12.98 | 13.28 |
| L1 | - | - | 3.50 |
| L2 | 6.50 REF | ||
| P | 3.08 | 3.18 | 3.28 |
| Q | 3.20 | - | 3.40 |
| 1 | 3 | 5 |
Ordering Information:
| Package Type | Units/Tube | Tubes / Inner Box | Units/ Inner Box | Inner Box/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO220F-C | 50 | 20 | 1000 | 6 | 6000 |
| TO220F-J | 50 | 20 | 1000 | 5 | 5000 |
Product Information:
| Product | Package | Pb Free | RoHS | Halogen Free |
|---|---|---|---|---|
| OSG60R580FTF | TO220F | yes | yes | yes |
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