Silicon NPN Transistor PANJIT BCX56-16-AU R1 000A1 Low Vce Saturation Voltage Green Molding Compound

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Product Description

NPN Low Vce(sat) Transistor - BCX56-16-AU

The BCX56-16-AU is a silicon NPN epitaxial transistor designed for applications requiring low collector-emitter saturation voltage (Vce(sat)). It offers high collector current capability, excellent DC current gain, and is AEC-Q101 qualified, making it suitable for demanding automotive and industrial applications. This device is lead-free and compliant with EU RoHS 2.0, utilizing a green molding compound.

Product Attributes

Brand: Panjit International Inc.
Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, IEC61249 Standard (Green molding compound)
Complementary Device: PNP complement: BCX53-16-AU
Material: Silicon NPN epitaxial type
Color: Green (molding compound)
Origin: Not specified

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Units
Maximum Ratings and Thermal Characteristics
Collector-Base Voltage	VCBO				120	V
Collector-Emitter Voltage	VCEO				100	V
Emitter-Base Voltage	VEBO				6	V
Collector Current (DC)	IC				1	A
Collector Current (Pulse)	ICP				3	A
Power Dissipation	PD				1.4	W
Junction Temperature	TJ				150	°C
Operating Junction and Storage Temperature Range	TJ,TSTG		-55	~	150	°C
Thermal Resistance from Junction to Ambient	RΘJA	(Note)		89		°C/W
Electrical Characteristics
Collector-Emitter Breakdown Voltage	BVCEO	IC= 10mA, IB= 0A	100	-	-	V
Collector-Base Breakdown Voltage	BVCBO	IC= 0.1mA, IE= 0A	120	-	-	V
Emitter-Base Breakdown Voltage	BVEBO	IE= 0.1mA, IC= 0A	6	-	-	V
Collector Cutoff Current	ICBO	VCB= 80V, IE= 0A	-	-	100	nA
Emitter Cutoff Current	IEBO	VEB= 6V, IC= 0A	-	-	100	nA
DC Current Gain	hFE	VCE= 2V, IC= 5mA	100	-	-
DC Current Gain	hFE	VCE= 2V, IC= 150mA	100	-	250
DC Current Gain	hFE	VCE= 2V, IC= 500mA	40	-	-
Collector-Emitter Saturation Voltage	VCE(SAT)	IC= 0.1A, IB= 10mA	-	60	120	mV
Collector-Emitter Saturation Voltage	VCE(SAT)	IC= 0.5A, IB= 50mA	-	150	350	mV
Collector-Emitter Saturation Voltage	VCE(SAT)	IC= 1A, IB= 0.1A	-	250	500	mV
Base-Emitter Saturation voltage	VBE(SAT)	IC= 0.1A, IB= 10mA	-	-	1.0	V
Base-Emitter Saturation voltage	VBE(SAT)	IC= 0.5A, IB= 50mA	-	-	1.1	V
Transition Frequency	fT	VCE= 5V, IE= -50mA	100	-	-	MHz
Collector Output Capacitance	COB	VCB= 10V, IE= 0A, f=1MHz	-	-	10	pF