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PANASONIC EMH2412 TL H N Channel Power MOSFET Ideal for LiB Charging Discharging and 24V 6A Circuits

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Product Description

Product Overview

The EMH2412 is an N-Channel Power MOSFET designed for 24V, 6A applications. It features low ON-resistance and is ideally suited for LiB charging and discharging switches. This common-drain type MOSFET supports 2.5V drive and includes a protection diode.

Product Attributes

  • Brand: onsemi
  • Certifications: Halogen free compliance

Technical Specifications

ParameterSymbolConditionsRatingsUnit
Absolute Maximum Ratings
Drain-to-Source VoltageVDSS24V
Gate-to-Source VoltageVGSS±12V
Drain Current (DC)ID6A
Drain Current (Pulse)IDPPW≤10μs, duty cycle≤1%60A
Allowable Power DissipationPDWhen mounted on ceramic substrate (900mm2×0.8mm), 1unit1.3W
Total DissipationPTWhen mounted on ceramic substrate (900mm2×0.8mm), 1unit1.4W
Channel TemperatureTch150°C
Storage TemperatureTstg-55 to +150°C
Electrical Characteristics
Drain-to-Source Breakdown VoltageV(BR)DSSID=1mA, VGS=0V24V
Zero-Gate Voltage Drain CurrentIDSSVDS=20V, VGS=0V--1μA
Gate-to-Source Leakage CurrentIGSSVGS=±8V, VDS=0V±10μA
Cutoff VoltageVGS(off)VDS=10V, ID=1mA0.5 - 1.3V
Forward Transfer Admittance| yfs |VDS=10V, ID=3A2.8 - 4.8S
Static Drain-to-Source On-State ResistanceRDS(on)1ID=3A, VGS=4.5V16 - 21 - 27
Static Drain-to-Source On-State ResistanceRDS(on)2ID=3A, VGS=4V17 - 22 - 29
Static Drain-to-Source On-State ResistanceRDS(on)3ID=3A, VGS=3.1V18 - 25 - 34
Static Drain-to-Source On-State ResistanceRDS(on)4ID=1.5A, VGS=2.5V21 - 30 - 42
Turn-ON Delay Timetd(on)See specified Test Circuit.310ns
Rise Timetr1020ns
Turn-OFF Delay Timetd(off)3000ns
Fall Timetf2250ns
Total Gate ChargeQgVDS=10V, VGS=4.5V, ID=6A6.3nC
Gate-to-Source ChargeQgs0.83nC
Gate-to-Drain “Miller” ChargeQg d1.9nC
Diode Forward VoltageVSDIS=6A, VGS=0V0.8 - 1.2V

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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