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Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI SFS06R03DF with Low RDS ON and Fast Switching

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Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SFS06R03DF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, engineered with advanced device design for superior performance. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically optimized for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: FSMOS MOSFET
  • Channel Type: N-Channel
  • Enhancement Mode: Yes
  • RoHS Compliant: Yes
  • Pb Free: Yes
  • Halogen Free: Yes

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage (min @ Tj(max)) VDS, min 60 V Tj(max)
Pulse drain current ID, pulse 480 A
Drain-source on-state resistance (max @ VGS=10V) RDS(ON) max 3.5 m VGS=10V
Total gate charge Qg 66.1 nC VGS=10V, VDS=30V, ID=25A
Drain source voltage VDS 60 V Tj=25C unless otherwise noted
Gate source voltage VGS 20 V Tj=25C unless otherwise noted
Continuous drain current (TC=25 C) ID 160 A TC=25 C
Pulsed drain current (TC=25 C) ID, pulse 480 A TC=25 C
Power dissipation (TC=25 C) PD 168 W TC=25 C
Single pulsed avalanche energy EAS 200 mJ
Operation and storage temperature Tstg, Tj -55 to 175 C
Thermal resistance, junction-case RJC 0.89 C/W
Thermal resistance, junction-ambient RJA 62 C/W Device mounted on 1 in FR-4 board with 2oz. Copper, still air environment, Ta=25 C
Drain-source breakdown voltage BVDSS 60 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 1.3 - 2.5 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 3.0 - 3.5 m VGS=10 V, ID=20 A
Drain-source on-state resistance RDS(ON) 3.5 - 4.5 m VGS=4.5 V, ID=10 A
Gate-source leakage current IGSS 100 nA VGS=20 V
Drain-source leakage current IDSS 1 A VDS=60 V, VGS=0 V
Input capacitance Ciss 5377 pF VGS=0 V, VDS=25 V, =100 kHz
Output capacitance Coss 1666 pF VGS=0 V, VDS=25 V, =100 kHz
Reverse transfer capacitance Crss 77.7 pF VGS=0 V, VDS=25 V, =100 kHz
Turn-on delay time td(on) 22.5 ns VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Rise time tr 6.7 ns VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Turn-off delay time td(off) 80.3 ns VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Fall time tf 26.8 ns VGS=10 V, VDS=30 V, RG=2 , ID=25 A
Total gate charge Qg 66.1 nC VGS=10 V, VDS=30 V, ID=25 A
Gate-source charge Qgs 10.7 nC VGS=10 V, VDS=30 V, ID=25 A
Gate-drain charge Qgd 10.9 nC VGS=10 V, VDS=30 V, ID=25 A
Gate plateau voltage Vplateau 2.9 V VGS=10 V, VDS=30 V, ID=25 A
Diode forward voltage VSD 1.3 V IS=20 A, VGS=0 V
Reverse recovery time trr 68.3 ns VR=30 V, IS=25 A, di/dt=100 A/s
Reverse recovery charge Qrr 73.0 nC VR=30 V, IS=25 A, di/dt=100 A/s
Peak reverse recovery current Irrm 1.9 A VR=30 V, IS=25 A, di/dt=100 A/s

Package Information (TO252-C):

Symbol mm Min mm Nom mm Max
A 2.20 2.30 2.38
A1 0.00 - 0.20
A2 0.97 1.07 1.17
b 0.68 0.78 0.90
b3 5.20 5.33 5.46
c 0.43 0.53 0.61
D 5.98 6.10 6.22
D1 5.30 - -
E 6.40 6.60 6.73
E1 4.63 - -
e - 2.286 BSC -
H 9.40 10.10 10.50
L 1.38 1.50 1.75
L1 2.90 REF - -
L2 0.51 BSC - -
L3 0.88 - 1.28
L4 0.50 - 1.00
0 - 8

Package Information (TO252-J):

Symbol mm Min mm Nom mm Max
A 2.20 2.30 2.38
A1 0.00 - 0.10
A2 0.90 1.01 1.10
b 0.72 - 0.85
b1 0.71 0.76 0.81
b2 0.72 - 0.90
b3 5.13 5.33 5.46
c 0.47 - 0.60
c1 0.46 0.51 0.56
c2 0.47 - 0.60
D 6.00 6.10 6.20
D1 5.25 - -
E 6.50 6.60 6.70
E1 4.70 - -
e 2.186 2.286 2.386
H 9.80 10.10 10.40
L 1.40 1.50 1.70
L1 2.90 REF - -
L2 0.508 BSC - -
L3 0.90 - 1.25
L4 0.60 0.80 1.00
L5 0.15 - 0.75
L6 1.80 REF - -
0 - 8
1 5 7 9
2 5 7 9

Ordering Information:

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box
TO252-C 2500 2 5000 5 25000
TO252-J 2500 2 5000 5 25000

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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