Enhancement Mode MOSFET ORIENTAL SEMI OSG80R250FF with Low Gate Charge and Robust Avalanche Capability
Product Overview
The OSG80R250FF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Generic series. Engineered with charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, minimizing conduction and switching losses. This MOSFET is optimized for high power density applications, offering superior switching performance and robust avalanche capability to meet the highest efficiency standards. It is ideal for use in PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.
Product Attributes
- Brand: Oriental Semiconductor
- Product Series: GreenMOS
- Technology: Charge Balance Technology
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| General Parameters | ||||
| Drain-source voltage | VDS | 800 | V | |
| Gate-source voltage | VGS | ±30 | V | |
| Continuous drain current (TC=25 °C) | ID | 17 | A | Calculated continuous current based on maximum allowable junction temperature. |
| Continuous drain current (TC=100 °C) | ID | 10.8 | A | Calculated continuous current based on maximum allowable junction temperature. |
| Pulsed drain current (TC=25 °C) | ID, pulse | 51 | A | Pulse width limited by max. junction temperature. |
| Continuous diode forward current (TC=25 °C) | IS | 17 | A | |
| Diode pulsed current (TC=25 °C) | IS, pulse | 51 | A | Pulse width limited by max. junction temperature. |
| Power dissipation (TC=25 °C) | PD | 34 | W | Pd is based on max. junction temperature, using junction-case thermal resistance. |
| Single pulsed avalanche energy | EAS | 640 | mJ | VDD=50 V, VGS=10 V, L=80 mH, starting Tj=25 °C. |
| MOSFET dv/dt ruggedness | dv/dt | 50 | V/ns | VDS=0…640 V |
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0…640 V, ISD≤ID |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | °C | |
| Thermal Characteristics | ||||
| Thermal resistance, junction-case | RθJC | 3.68 | °C/W | |
| Thermal resistance, junction-ambient | RθJA | 62.5 | °C/W | |
| Electrical Characteristics (Tj=25 °C unless otherwise specified) | ||||
| Drain-source breakdown voltage | BVDSS | 800 | V | VGS=0 V, ID=250 μA |
| Gate threshold voltage | VGS(th) | 2.9 - 3.9 | V | VDS=VGS, ID=250 μA |
| Drain-source on-state resistance | RDS(ON) | 0.2 - 0.25 | Ω | VGS=10 V, ID=8.5 A |
| Drain-source on-state resistance (Tj=150 °C) | RDS(ON) | 0.44 | Ω | VGS=10 V, ID=8.5 A |
| Gate-source leakage current | IGSS | ±100 | nA | VGS=±30 V |
| Drain-source leakage current | IDSS | 10 | μA | VDS=800 V, VGS=0 V |
| Dynamic Characteristics | ||||
| Input capacitance | Ciss | 2425.4 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Output capacitance | Coss | 136.0 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Reverse transfer capacitance | Crss | 3.0 | pF | VGS=0 V, VDS=50 V, =100 kHz |
| Turn-on delay time | td(on) | 32.6 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=8 A |
| Rise time | tr | 15.9 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=8 A |
| Turn-off delay time | td(off) | 70.2 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=8 A |
| Fall time | tf | 6.9 | ns | VGS=10 V, VDS=400 V, RG=2 Ω, ID=8 A |
| Gate Charge Characteristics | ||||
| Total gate charge | Qg | 41.2 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate-source charge | Qgs | 10.8 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate-drain charge | Qgd | 12.4 | nC | VGS=10 V, VDS=400 V, ID=8 A |
| Gate plateau voltage | Vplateau | 5.4 | V | VGS=10 V, VDS=400 V, ID=8 A |
| Body Diode Characteristics | ||||
| Diode forward voltage | VSD | 1.3 | V | IS=17 A, VGS=0 V |
| Reverse recovery time | trr | 356.0 | ns | VR=400 V, IS=8 A, di/dt=100 A/μs |
| Reverse recovery charge | Qrr | 5.2 | μC | VR=400 V, IS=8 A, di/dt=100 A/μs |
| Peak reverse recovery current | Irrm | 28.0 | A | VR=400 V, IS=8 A, di/dt=100 A/μs |
| Package Information | ||||
| Package Type | TO220F-P | |||
| Model | OSG80R250FF | TO220F | OSG80R250F | |
| Dimensions (mm) | E | 9.96 - 10.36 | mm | |
| Dimensions (mm) | D | 15.57 - 16.17 | mm | |
| Dimensions (mm) | L | 12.68 - 13.28 | mm | |
Ordering Information:
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO220F-P | 50 | 20 | 1000 | 6 | 6000 |
Product Information:
| Product | Package | Pb Free | RoHS | Halogen Free |
|---|---|---|---|---|
| OSG80R250FF | TO220F | yes | yes | yes |
Legal Disclaimer: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Oriental Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. For further information on technology, delivery terms and conditions and prices, please contact the Oriental Semiconductor sales representatives (www.orientalsemi.com).
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