R O B5817W diode with low forward voltage drop and solderable terminals per MIL STD 750 method 2026

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Product Description

Product Overview

These surface mount Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. They feature a low-profile package, ideal for automated placement, and offer low forward and reverse recovery times.

Product Attributes

Brand: (Hongjiacheng)
Origin: Zhuhai Hongjiacheng Technology co., Ltd
Certifications: RoHS-compliant, halogen-free, UL 94V-0 flammability rating
Case: SOD-123
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Cathode line denotes the cathode end
Marking: B5817W:SJ, B5818W:SK, B5819W:SL

Technical Specifications

Parameter	Symbol	Unit	B5817W	B5818W	B5819W	Test Conditions
Maximum Repetitive Peak Reverse Voltage	VRRM	V	20	30	40
Maximum RMS Voltage	VRMS	V	14	21	28
Maximum DC Blocking Voltage	VDC	V	20	30	40
Maximum Average Forward Rectified Current	IF(AV)	A	1.0
Non-repetitive Peak Forward Surge Current @t=8.3ms Half-sine wave	IFSM	A	9.0
Power Dissipation	Pd	mW	500			(Ta=25)
Storage Temperature	Tstg		-55~+150
Junction Temperature	Tj		-55 ~+150
Typical Thermal Resistance	RJ-A	/W	250
Maximum instantaneous forward voltage	VF1	V	0.45	0.55	0.6	IF=1.0A, (Ta=25)
Maximum instantaneous forward voltage	VF2	V	0.75	0.875	0.9	IF=3.0A, (Ta=25)
Maximum DC reverse current at rated DC blocking voltage	IR1	mA	1.0			VR=VDC, TA=25
Maximum DC reverse current at rated DC blocking voltage	IR2	mA	10			VR=VDC, TA=100
Typical junction capacitance	CJ	pF	120			VR=4.0V, f=1MHz, (Ta=25)