PANJIT MMDT3904 R1 00001 General Purpose NPN Transistor Featuring 200mA Continuous Collector Current
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Product Description
Product Overview
The MMDT3904 is a dual NPN general purpose switching transistor designed for a wide range of applications. Featuring an NPN epitaxial silicon planar design, it offers a collector-emitter voltage of 40V and a continuous collector current of 200mA. This device is compliant with EU RoHS 2011/65/EU directive and uses a green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Material: NPN epitaxial silicon, planar design
- Color: Green molding compound (Halogen Free)
- Certifications: EU RoHS 2011/65/EU directive compliant
Technical Specifications
| Parameter | Symbol | Value | Units | Test Condition | |
| POWER ABSOLUTE RATINGS | |||||
| Collector - Emitter Voltage | VCEO | 40 | V | ||
| Collector - Base Voltage | VCBO | 60 | V | ||
| Emitter - Base Voltage | VEBO | 6.0 | V | ||
| Collector Current - Continuous | IC | 200 | mA | ||
| THERMAL CHARACTERISTICS | |||||
| Max Power Dissipation (Note 1) | PTOT | 225 | mW | Transistor mounted on FR-4 board 70 x 60 x 1mm. | |
| Thermal Resistance, Junction to Ambient | RJA | 625 | OC/W | ||
| Junction Temperature | TJ | -55 to 150 | OC | ||
| Storage Temperature | TSTG | -55 to 150 | OC | ||
| ELECTRICAL CHARACTERISTICS | |||||
| Collector - Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC=1.0mA, IB=0 | |
| Collector - Base Breakdown Voltage | V(BR)CBO | 60 | V | IC=10uA, IE=0 | |
| Emitter - Base Breakdown Voltage | V(BR)EBO | 6.0 | V | IE=10uA, IC=0 | |
| Base Cutoff Current | I Bl | - | 50 | nA | VCE=30V, VEB=3.0V |
| Collector Cutoff Current | ICEX | - | 50 | nA | VCE=30V, VEB=3.0V |
| DC Current Gain | hFE | 40 - 300 | - | IC=0.1mA, VCE=1.0V | |
| 70 - 300 | - | IC=1.0mA, VCE=1.0V | |||
| 100 - 300 | - | IC=10mA, VCE=1.0V | |||
| 60 - 300 | - | IC=50mA, VCE=1.0V | |||
| 30 - 300 | - | IC=100mA, VCE=1.0V | |||
| Collector - Emitter Saturation Voltage | VCE(SAT) | - | 0.2 | V | IC=10mA, IB=1.0mA |
| - | 0.3 | V | IC=50mA, IB=5.0mA | ||
| Base - Emitter Saturation Voltage | VBE(SAT) | 0.65 - 0.95 | V | IC=10mA, IB=1.0mA | |
| 0.85 - 0.95 | V | IC=50mA, IB=5.0mA | |||
| Collector - Base Capacitance | C CBO | - | 4.0 | pF | VCB=5V, IE=0, f=1MHz |
| Emitter - Base Capacitance | C EBO | - | 8.0 | pF | VCB=0.5V, IC=0, f=1MHz |
| Delay Time | td | - | 35 | ns | VCC=3V,VBE=-0.5V, IC=10mA,IB=1.0mA |
| Rise Time | tr | - | 35 | ns | VCC=3V,VBE=-0.5V, IC=10mA,IB=1.0mA |
| Storage Time | ts | - | 200 | ns | VCC=3V,IC=10mA, IB1=IB2=1.0mA |
| Fall Time | tf | - | 50 | ns | VCC=3V,IC=10mA, IB1=IB2=1.0mA |
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