High Collector Current Silicon PNP Transistor BCX53-16-AU R1 000A1 with AEC Q101 and RoHS Compliance
Price:
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The BCX53-16-AU is a Silicon PNP epitaxial type transistor offering low Vce(sat) of -0.4V (max) at Ic/Ib = -500mA / -50mA. It features high collector current capability, excellent DC current gain characteristics, and is AEC-Q101 qualified. This transistor is compliant with EU RoHS 2.0 and uses a green molding compound as per IEC 61249 Standard. Its NPN complement is BCX56-16-AU.
Product Attributes
- Brand: Panjit International Inc.
- Type: PNP Low Vce(sat) Transistor
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 Standard
- Material: Silicon PNP epitaxial type
- NPN Complement: BCX56-16-AU
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| OFF Characteristics | ||||||
| Collector-Emitter Breakdown Voltage | BVCEO | IC= -10mA, IB= 0A | -100 | - | - | V |
| Collector-Base Breakdown Voltage | BVCBO | IC= -0.1mA, IE= 0A | -120 | - | - | V |
| Emitter-Base Breakdown Voltage | BVEBO | IE= -0.1mA, IC= 0A | -6 | - | - | V |
| Collector Cutoff Current | ICBO | VCB= -80V, IE= 0A | - | - | -100 | nA |
| Emitter Cutoff Current | IEBO | VEB= -6V, IC= 0A | - | - | -100 | nA |
| ON Characteristics | ||||||
| DC Current Gain | hFE | VCE= -2V, IC= -10mA | 100 | - | - | - |
| VCE= -2V, IC= -150mA | 100 | - | 250 | - | ||
| VCE= -2V, IC= -500mA | 40 | - | - | - | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC= -0.1A, IB= -10mA | - | -90 | -150 | mV |
| IC= -0.5A, IB= -50mA | - | -260 | -400 | - | ||
| IC= -1A, IB= -0.1A | - | -430 | -600 | - | ||
| Base-Emitter Saturation voltage | VBE(SAT) | IC= -0.1A, IB= -10mA | - | - | -1.0 | V |
| IC= -0.5A, IB= -50mA | - | - | -1.1 | - | ||
| Transition Frequency | fT | VCE= -5V, IE= 50mA | 100 | - | - | MHz |
| Collector Output Capacitance | COB | VCB= -10V, IE= 0A, f=1MHz | - | - | 10 | pF |
| Maximum Ratings and Thermal Characteristics | ||||||
| Collector-Base Voltage | VCBO | -120 | - | - | V | |
| Collector-Emitter Voltage | VCEO | -100 | - | - | V | |
| Emitter-Base Voltage | VEBO | -6 | - | - | V | |
| Collector Current (DC) | IC | -1 | - | - | A | |
| Collector Current (Pulse) | ICP | -3 | - | - | A | |
| Power Dissipation | PD | TA=25 oC | - | - | 1.4 | W |
| Junction Temperature | TJ | - | - | 150 | oC | |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | oC | |
| Thermal Resistance from Junction to Ambient | RJA | Note | - | 89 | - | oC/W |
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