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High voltage NPN transistor PANJIT MMBTA06W R1 00001 featuring 225mW power dissipation and lead free design

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Product Description

Product Overview

The PMMBTA06W is an NPN silicon planar high voltage transistor designed for various electronic applications. It offers a collector current of up to 500mA and a maximum power dissipation of 225mW. This device is lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free).

Product Attributes

  • Brand: Panjit International Inc.
  • Material: NPN silicon, planar design
  • Certifications: EU RoHS 2011/65/EU directive, IEC61249 Std. (Halogen Free)

Technical Specifications

ParameterSymbolTest ConditionLimitUnits
Maximum Ratings and Thermal Characteristics
Collector-Emitter VoltageVCBO80V
Collector-Base VoltageVCEO80V
Emitter-Base VoltageVEBO4V
Collector Current-ContinuousIC500mA
Maximum Power Dissipation (Note 1)PD225mW
Operating Junction and Storage Temperature RangeTJ,TSTG-55 to +150C
Typical Junction-to Ambient Thermal Resistance (Note 1)RJA550C/W
Electrical Characteristics
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 1mA, IB= 080V
Collector-Base Breakdown VoltageV(BR)CBOIC= 100A, IE= 080V
Emitter-Base Breakdown VoltageV(BR)EBOIE= 100A, IC= 04V
Collector Cutoff CurrentICBOVCB= 80V, IE= 0100nA
Collector Cutoff CurrentICESVCE= 60V, IB= 0100nA
DC Current GainhFEVCE= 1V, IC= 10mA100-
DC Current GainhFEVCE= 1V, IC= 100mA100-
Collector-Emitter Saturation VoltageVCE(SAT)IC=100mA, IB= 10mA0.25V
Base-Emitter Turn-on voltageVBE(on)IC=100mA, VCE= 1V1.2V
Current-Gain-Bandwidth ProductfTIC=10mA, VCE= 2V, f=100MHz100MHz

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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