General Purpose NPN Switching Transistor Panjit MMBT3904 R1 00301 with 40V Collector Emitter Voltage
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Product Description
MMBT3904 NPN General Purpose Switching Transistor
The MMBT3904 is an NPN epitaxial silicon, planar design general purpose switching transistor. It offers a collector-emitter voltage of 40V and a collector current of 200mA. Key features include a transition frequency of over 300MHz and compliance with EU RoHS 2.0. This transistor is suitable for various switching applications.
Product Attributes
- Brand: Panjit International Inc.
- Material: Silicon
- Color: Green molding compound
- Certifications: EU RoHS 2.0
- Mechanical Data: SOT-23 Package
Technical Specifications
| Parameter | Symbol | Min. | Max. | Unit | Test Conditions |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -40 | V | IC = -0.1mA, IB = 0 | |
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IC = -10uA, IE = 0 | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -6.0 | V | IE = -10uA, IC = 0 | |
| Collector Cutoff Current | ICEX | -50 | nA | VCE = 30V, VBE = 0.3V | |
| Base Cutoff Current | IBL | -50 | nA | VCE = 30V, VBE = 0.3V | |
| DC Current Gain | hFE | 30 | VCE = 10V, IC = 0.1mA | ||
| DC Current Gain | hFE | 70 | VCE = 10V, IC = 1mA | ||
| DC Current Gain | hFE | 100 | VCE = 10V, IC = 10mA | ||
| DC Current Gain | hFE | 100 | VCE = 10V, IC = 10mA | ||
| DC Current Gain | hFE | 63 | VCE = 10V, IC = 10mA | ||
| DC Current Gain | hFE | 40 | VCE = 10V, IC = 10mA | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.2 | V | IC = 10mA, IB = 1mA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | V | IC = 50mA, IB = 5mA | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.59 | 0.85 | V | IC = 10mA, IB = 1mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.56 | V | IC = 50mA, IB = 5mA | |
| Collector-Emitter Capacitance | Cobo | 4.0 | pF | VCB = 5V, f = 1MHz | |
| Collector-Base Capacitance | Cibo | 8.0 | pF | VEB = 5V, f = 1MHz | |
| Transition Frequency | fT | 300 | MHz | IC = 10mA, VCE = 20V | |
| Storage Time | ts | 200 | ns | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | |
| Fall Time | tf | 50 | ns | VCC = 3V, IC = 10mA, IB1 = 1mA, IB2 = -1mA | |
| Power Dissipation | PTOT | 225 | mW | Note 1 | |
| Thermal Resistance | RJA | 655 | C/W | Note 1 | |
| Junction Temperature | TJ | -55 | 150 | C | |
| Storage Temperature | TSTG | -55 | 150 | C |
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