Enhancement Mode N Channel MOSFET ORIENTAL SEMI SFS06R03PF Suitable for Switched Mode Power Supplies
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Product Description
Product Overview
The SFS06R03PF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, built on their unique FSMOS technology. It is engineered for low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically designed for synchronous rectification power systems requiring low driving voltage. Key applications include PD chargers, motor drivers, switching voltage regulators, DC-DC converters, and switched-mode power supplies.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS MOSFET
- Channel Type: N-Channel
- Enhancement Mode: Yes
- RoHS Compliant: Yes
- Halogen Free: Yes
- Pb Free: Yes
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage (min @ Tj(max)) | VDS | 60 | V | |
| Drain-Source Voltage | VDS | 60 | V | Tj=25C unless otherwise noted |
| Gate-Source Voltage | VGS | ±20 | V | Tj=25C unless otherwise noted |
| Continuous Drain Current (TC=25C) | ID | 160 | A | TC=25C unless otherwise noted |
| Pulsed Drain Current (TC=25C) | ID, pulse | 480 | A | TC=25C unless otherwise noted |
| Continuous Diode Forward Current (TC=25C) | IS | 160 | A | TC=25C unless otherwise noted |
| Diode Pulsed Current (TC=25C) | IS, Pulse | 480 | A | TC=25C unless otherwise noted |
| Power Dissipation (TC=25C) | PD | 168 | W | TC=25C unless otherwise noted |
| Single Pulsed Avalanche Energy | EAS | 200 | mJ | VDD=30 V, VGS=10 V, L=0.3 mH, starting Tj=25 C |
| Operation and Storage Temperature | Tstg, Tj | -55 to 175 | C | |
| Thermal Resistance, Junction-Case | RJC | 0.89 | C/W | |
| Thermal Resistance, Junction-Ambient | RJA | 62 | C/W | Device mounted on 1 in² FR-4 board with 2oz. Copper, still air, Ta=25 C |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0 V, ID=250 µA |
| Gate Threshold Voltage | VGS(th) | 1.3 - 2.5 | V | VDS=VGS, ID=250 µA |
| Drain-Source On-State Resistance (max @ VGS=10V) | RDS(ON) | 3.5 | mΩ | VGS=10 V, ID=20 A |
| Drain-Source On-State Resistance | RDS(ON) | 3.0 - 3.5 | mΩ | VGS=10 V, ID=20 A |
| Drain-Source On-State Resistance | RDS(ON) | 3.5 - 4.5 | mΩ | VGS=4.5 V, ID=10 A |
| Gate-Source Leakage Current | IGSS | ±100 | nA | VGS=±20 V |
| Drain-Source Leakage Current | IDSS | 1 | µA | VDS=60 V, VGS=0 V |
| Input Capacitance | Ciss | 5377 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Output Capacitance | Coss | 1666 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Reverse Transfer Capacitance | Crss | 77.7 | pF | VGS=0 V, VDS=25 V, =100 kHz |
| Turn-on Delay Time | td(on) | 22.5 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A |
| Rise Time | tr | 6.7 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A |
| Turn-off Delay Time | td(off) | 80.3 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A |
| Fall Time | tf | 26.8 | ns | VGS=10 V, VDS=30 V, RG=2 Ω, ID=25 A |
| Total Gate Charge | Qg | 66.1 | nC | VGS=10 V, VDS=30 V, ID=25 A |
| Gate-Source Charge | Qgs | 10.7 | nC | VGS=10 V, VDS=30 V, ID=25 A |
| Gate-Drain Charge | Qgd | 10.9 | nC | VGS=10 V, VDS=30 V, ID=25 A |
| Gate Plateau Voltage | Vplateau | 2.9 | V | VGS=10 V, VDS=30 V, ID=25 A |
| Diode Forward Voltage | VSD | 1.3 | V | IS=20 A, VGS=0 V |
| Reverse Recovery Time | trr | 68.3 | ns | VR=30 V, IS=25 A, di/dt=100 A/µs |
| Reverse Recovery Charge | Qrr | 73.0 | nC | VR=30 V, IS=25 A, di/dt=100 A/µs |
| Peak Reverse Recovery Current | Irrm | 1.9 | A | VR=30 V, IS=25 A, di/dt=100 A/µs |
| Product Name | SFS06R03PF | |||
| Package Marking | SFS06R03P | |||
| Package Type | TO220 |
| Package Type | Units/Tube | Tubes / Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO220-C | 50 | 20 | 1000 | 6 | 6000 |
| TO220-J | 50 | 20 | 1000 | 5 | 5000 |
| Product | Package | Pb Free | RoHS | Halogen Free |
|---|---|---|---|---|
| SFS06R03PF | TO220 | yes | yes | yes |
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