NPN Silicon Transistor PANJIT BC846A R1 00001 General Purpose Amplifier SOT23 Package RoHS Compliant

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Product Description

NPN General Purpose Transistors

The BC846, BC847, BC848, BC849, and BC850 series are NPN epitaxial silicon planar design transistors suitable for general purpose amplifier applications. These devices are lead-free and compliant with EU RoHS 2011/65/EU directive, utilizing a green molding compound as per IEC61249 Std. (Halogen Free). They are available in a SOT-23 plastic package with solderable terminals per MIL-STD-750, Method 2026.

Product Attributes

Brand: Panjit International Inc.
Material: Silicon
Color: Green (molding compound)
Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)

Technical Specifications

Series	Voltage (VCEO)	Power Dissipation (mW)	Collector Current (IC)	Collector Current (ICM)	Thermal Resistance (RJA)	Operating/Storage Temp (C)
BC846	65	330	100mA	200mA	375 C/W	-55 to 150
BC847, BC850	45	330	100mA	200mA	375 C/W	-55 to 150
BC848, BC849	30	330	100mA	200mA	375 C/W	-55 to 150

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Collector-Emitter Breakdown Voltage	V(BR)CEO	IC=10mA, IB=0	65 (BC846A/B) 45 (BC847A/B/C, BC850B/C) 30 (BC848A/B/C, BC849B/C)	-	-	V
Collector-Base Breakdown Voltage	V(BR)CBO	IC=10uA, IE=0	80 (BC846A/B) 50 (BC847A/B/C, BC850B/C) 30 (BC848A/B/C, BC849B/C)	-	-	V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10uA, IC=0	6 (BC846A/B) 6 (BC847A/B/C, BC850B/C) 5 (BC848A/B/C, BC849B/C)	-	-	V
Emitter-Base Cutoff Current	IEBO	VEB=5V	-	-	100	nA
Collector-Base Cutoff Current	ICBO	VCB=30V, IE=0	-	-	15	nA
Collector-Base Cutoff Current (TJ=150C)	ICBO	VCB=30V, IE=0, TJ=150C	-	-	5	A
DC Current Gain (Suffix A)	hFE	IC=10uA, VCE=5V	-	90	270	-
DC Current Gain (Suffix B)	hFE	IC=10uA, VCE=5V	-	150	420	-
DC Current Gain (Suffix C)	hFE	IC=10uA, VCE=5V	-	270	800	-
DC Current Gain	hFE	IC=2mA, VCE=5V	110 (BC846~BC848 A) 180 (BC846~BC850 B) 220 (BC847~BC850 C)	200 (BC846~BC848 A) 290 (BC846~BC850 B) 450 (BC847~BC850 C)	420 (BC846~BC848 A) 520 (BC846~BC850 B) 800 (BC847~BC850 C)	-
Collector-Emitter Saturation Voltage	VCE(SAT)	IC=10mA, IB=0.5mA	-	-	0.25	V
Collector-Emitter Saturation Voltage	VCE(SAT)	IC=100mA, IB=5mA	-	-	0.6	V
Base-Emitter Saturation Voltage	VBE(SAT)	IC=10mA, IB=0.5mA	-	0.7	-	V
Base-Emitter Saturation Voltage	VBE(SAT)	IC=100mA, IB=5mA	-	0.9	-	V
Base-Emitter Voltage	VBE(ON)	IC=2mA, VCE=5V	0.58	0.66	-	V
Base-Emitter Voltage	VBE(ON)	IC=10mA, VCE=5V	0.70	0.77	-	V
Collector-Base Capacitance	C CBO	VCB=10V, IE=0, f=1MHz	-	-	4.5	pF