Power MOSFET ORIENTAL SEMI OSG55R074HSZF with 0.074 Milliohm On Resistance and Integrated Fast Recovery Diode
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Product Description
Product Overview
The OSG55R074HSZF is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS Z series. It leverages charge balance technology for exceptional low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. This series integrates a fast recovery diode (FRD) for minimized reverse recovery time, making it ideal for resonant switching topologies. Applications include PC power, telecom power, server power, EV chargers, and motor drivers.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: GreenMOS Z series
- Technology: Charge Balance Technology
- Diode: Integrated Fast Recovery Diode (FRD)
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-source voltage (min @ Tj(max)) | VDS | 600 | V | Tj(max) |
| Pulsed drain current | ID, pulse | 141 | A | TC=25 C |
| RDS(ON) (max @ VGS=10V) | RDS(ON) | 0.074 | m | VGS=10 V, ID=23.5 A |
| Total gate charge | Qg | 67.7 | nC | VGS=10 V, VDS=400 V, ID=16 A |
| Drain-source breakdown voltage | BVDSS | 550 | V | VGS=0 V, ID=1 mA |
| Gate threshold voltage | VGS(th) | 3.5 - 4.5 | V | VDS=VGS, ID=1 mA |
| Continuous drain current (TC=25 C) | ID | 47 | A | TC=25 C |
| Continuous drain current (TC=100 C) | ID | 30 | A | TC=100 C |
| Continuous diode forward current (TC=25 C) | IS | 47 | A | TC=25 C |
| Power dissipation (TC=25 C) | PD | 278 | W | TC=25 C |
| Single pulsed avalanche energy | EAS | 1000 | mJ | VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25 C |
| Thermal resistance, junction-case | RJC | 0.45 | C/W | - |
| Thermal resistance, junction-ambient | RJA | 62 | C/W | Ta=25 C (on 1 in FR-4 board) |
| Input capacitance | Ciss | 3915.5 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Output capacitance | Coss | 348.5 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Reverse transfer capacitance | Crss | 9.3 | pF | VGS=0 V, VDS=50 V, =100 KHz |
| Diode forward voltage | VSD | 1.4 | V | IS=47 A, VGS=0 V |
| Reverse recovery time | trr | 176 | ns | IS=16 A, di/dt=100 A/s |
| Reverse recovery charge | Qrr | 1.1 | uC | IS=16 A, di/dt=100 A/s |
| Peak reverse recovery current | Irrm | 11.2 | A | IS=16 A, di/dt=100 A/s |
| Package Marking | - | OSG55R074HSZ | - | TO247 |
Package Information (TO247-C)
| Symbol | mm (Min) | mm (Nom) | mm (Max) |
|---|---|---|---|
| A | 4.80 | 5.00 | 5.20 |
| A1 | 2.21 | 2.41 | 2.59 |
| A2 | 1.85 | 2.00 | 2.15 |
| b | 1.11 | 1.21 | 1.36 |
| b2 | 1.91 | 2.01 | 2.21 |
| b4 | 2.91 | 3.01 | 3.21 |
| c | 0.51 | 0.61 | 0.75 |
| D | 20.80 | 21.00 | 21.30 |
| D1 | 16.25 | 16.55 | 16.85 |
| E | 15.50 | 15.80 | 16.10 |
| E1 | 13.00 | 13.30 | 13.60 |
| E2 | 4.80 | 5.00 | 5.20 |
| E3 | 2.30 | 2.50 | 2.70 |
| e | 5.44BSC | ||
| L | 19.82 | 19.92 | 20.22 |
| L1 | - | - | 4.30 |
| P | 3.40 | 3.60 | 3.80 |
| P1 | - | - | 7.30 |
| S | 6.15BSC | ||
Package Information (TO247-J)
| Symbol | mm (Min) | mm (Nom) | mm (Max) |
|---|---|---|---|
| A | 4.90 | 5.00 | 5.20 |
| A1 | 2.31 | 2.41 | 2.59 |
| A2 | 1.90 | 2.00 | 2.15 |
| b | 1.16 | 1.21 | 1.36 |
| b1 | 1.15 | - | - |
| b2 | 1.96 | 2.01 | 2.21 |
| b3 | 1.95 | - | - |
| b4 | 2.96 | 3.01 | 3.21 |
| b5 | 2.96 | - | - |
| c | 0.59 | 0.61 | 0.75 |
| D | 20.90 | 21.00 | 21.30 |
| D1 | 16.25 | 16.55 | 16.85 |
| E | 15.70 | 15.80 | 16.10 |
| E1 | 13.10 | 13.30 | 13.60 |
| E2 | 4.40 | 5.00 | 5.20 |
| E3 | 2.40 | 2.50 | 2.70 |
| e | 5.436BSC | ||
| L | 19.80 | 19.92 | 20.22 |
| L1 | - | - | 4.30 |
| M | - | 0.35 | - |
| P | 3.40 | 3.60 | 3.80 |
| P1 | 7.00 | - | - |
| P2 | 2.40 | - | 7.30 |
| Q | 5.60 | - | - |
| S | 6.05 | - | 7.30 |
| T | - | 0.80 | - |
| U | 6.00BSC | ||
Ordering Information
| Package Type | Units/Tube | Tubes/Inner Box | Units/Inner Box | Inner Boxes/Carton Box | Units/Carton Box |
|---|---|---|---|---|---|
| TO247-C | 30 | 11 | 330 | 6 | 1980 |
| TO247-J | 30 | 20 | 600 | 5 | 3000 |
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