General purpose NPN transistor PANJIT MMBT2222AW with 40V breakdown voltage and green molding compound

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Product Description

MMBT2222AW NPN General Purpose Switching Transistor

The MMBT2222AW is an NPN epitaxial silicon planar design transistor suitable for general purpose switching applications. It features a collector-emitter voltage of 40V and a continuous collector current of 600mA. This product is lead-free, compliant with EU RoHS 2011/65/EU, and uses a green molding compound as per IEC61249 Std. (Halogen Free).

Product Attributes

Brand: Panjit International Inc.
Material: NPN epitaxial silicon, planar design
Color: Green (molding compound)
Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Breakdown Voltage	VCEO	IC=1.0mA, IB=0	40	-	-	V
	VCBO	IC=10uA, IE=0	75	-	-	V
	VEBO	IE=10uA, IC=0	6.0	-	-	V
	V(BR)CEO	IC=1.0mA, IB=0	40	-	-	V
Cutoff Current	IBL	VCE=60V, VEB=3.0V	-	-	20	nA
	ICEX	VCE=60V, VEB=3.0V	-	-	10	nA
	ICBO	VCE=60V, IE=0, TJ=125 OC	-	-	10	uA
DC Current Gain	hFE	IC=0.1mA, VCE=10V	35	-	-	-
	hFE	IC=1.0mA, VCE=10V	50	-	-	-
	hFE	IC=10mA, VCE=10V	75	-	-	-
	hFE	IC=10mA, VCE=10V,TJ=125 OC	35	-	-	-
	hFE	IC=150mA, VCE=10V (Note 2)	100	-	-	-
	hFE	IC=500mA, VCE=10V (Note 2)	40	-	-	-
Saturation Voltage	VCE(SAT)	IC=150mA, IB=15mA	-	0.3	-	V
Saturation Voltage	VBE(SAT)	IC=150mA, IB=15mA	0.6	-	-	V
Capacitance	CBO	VCB=10V, IE=0, f=1MHz	-	-	8.0	pF
Capacitance	EBO	VCB=0.5V, IC=0, f=1MHz	-	-	25	pF
Switching Time	td	VCC=3V,VBE=-5V, IC=150mA,IB=15mA	-	-	10	ns
	tr	VCC=3V,VBE=-5V, IC=150mA,IB=15mA	-	-	25	ns
	ts	VCC=30V,IC=150mA IB1=IB2=15mA	-	-	225	ns
	tf	VCC=30V,IC=150mA IB1=IB2=15mA	-	-	60	ns
Max Power Dissipation	PTOT	(Note 1)	-	-	150	mW
Thermal Resistance	RJA		-	-	830	OC/W
Junction Temperature	TJ		-55	-	150	OC
Storage Temperature	TSTG		-55	-	150	OC