PNJIT BC857BS R1 00001 PNP epitaxial silicon dual transistor suitable general purpose amplifier applications

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Product Description

BC857BS PNP GENERAL PURPOSE DUAL TRANSISTORS

The BC857BS is a PNP epitaxial silicon, planar design dual transistor suitable for general purpose amplifier applications. It features lead-free compliance with EU RoHS 2.0 and a green molding compound. The device is housed in a SOT-363 plastic package with solderable terminals per MIL-STD-750, Method 2026.

Product Attributes

Brand: Panjit International Inc.
Material: PNP epitaxial silicon, planar design
Color: Green (molding compound)
Certifications: EU RoHS 2.0 compliant, IEC 61249 standard

Technical Specifications

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
POWER ABSOLUTE MAXIMUM RATINGS
Collector - Emitter Voltage	VCEO		-45			V
Collector - Base Voltage	VCBO		-50			V
Emitter - Base Voltage	VEBO		-5.0			V
Collector Current	IC	Continuous			-100	mA
Power Dissipation	PD	On FR-4 board 70 x 60 x 1mm			0.3	W
THERMAL CHARACTERISTICS
Junction to Ambient Thermal Resistance	RJA	Note 1		223		C/W
Junction Temperature	TJ		-55		150	C
Storage Temperature	TSTSG		-55		150	C
ELECTRICAL CHARACTERISTICS (TJ=25C, unless otherwise noted)
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage	V(BR)CEO	IC=-10mA	-45			V
Collector - Emitter Breakdown Voltage	V(BR)CES	IC=-10uA, VEB=0	-50			V
Collector - Base Breakdown Voltage	V(BR)CBO	IC=-10uA	-50			V
Emitter - Base Breakdown Voltage	V(BR)EBO	IE=-1uA	-5.0			V
Collector Cutoff Current	ICBO	VCB=-30V			-5.0	nA
Collector Cutoff Current	ICBO	VCB=-30V, TA=150C			-15	uA
ON CHARACTERISTICS
DC Current Gain	hFE	IC=-10uA, VCE=-5V	150
DC Current Gain	hFE	IC=-2.0mA, VCE=-5V	290		475
Collector - Emitter Saturation Voltage	VCE(SAT)	IC=-10mA, IB=-0.5mA			-0.3	V
Collector - Emitter Saturation Voltage	VCE(SAT)	IC=-100mA, IB=-5.0mA			-0.65	V
Base - Emitter Saturation Voltage	VBE(SAT)	IC=-10mA, IB=-0.5mA			-0.7	V
Base - Emitter Saturation Voltage	VBE(SAT)	IC=-100mA, IB=-5.0mA			-0.9	V
Base - Emitter Voltage	VBE(ON)	IC=-2mA, VCE=-5.0V	-0.6			V
Base - Emitter Voltage	VBE(ON)	IC=-10mA, VCE=-5.0V	-0.75		-0.82	V
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product	fT	IC=-10mA, VCE=-5.0Vdc, f=100MHz	100			MHz
Output Capacitance	Cobo	VCB=-10V, f=1.0MHz			4.5	pF
Noise Figure	NF	IC=0.2mA, VCE=5.0Vdc, RS=2.0k, f=1.0kHz, BW=200Hz			10	dB