Enhancement Mode N Channel Power MOSFET ORIENTAL SEMI OSG60R180FSF with Low RDS on and Fast Switching
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Product Description
Product Overview
The OSG60R180xSF series is an Enhancement Mode N-Channel Power MOSFET from Oriental Semiconductor, utilizing advanced GreenMOSTM technology. These MOSFETs offer low RDS(on), low gate charge, fast switching, and excellent avalanche characteristics. They are designed for applications requiring high efficiency and reliability, such as active power factor correction and switching mode power supplies. The series is available in multiple package types including TO220, TO220F, TO262, TO247, and TO263, catering to diverse design needs.
Product Attributes
- Brand: Oriental Semiconductor
- Technology: GreenMOSTM
- Product Type: Enhancement Mode N-Channel Power MOSFET
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Model | Package | VDS (V) | ID (A) | RDS(ON) max @ VGS=10V (m) | Qg (nC) | Units/Tube | Units/Reel |
|---|---|---|---|---|---|---|---|
| OSG60R180PSF | TO220 | 600 | 20 (TC=25) | 180 | 35.5 | 50 | N/A |
| OSG60R180FSF | TO220F | 600 | 20 (TC=25) | 180 | 35.5 | 50 | N/A |
| OSG60R180ISF | TO262 | 600 | 20 (TC=25) | 180 | 35.5 | 50 | N/A |
| OSG60R180HSF | TO247 | 600 | 20 (TC=25) | 180 | 35.5 | 30 | N/A |
| OSG60R180KSF | TO263 | 600 | 20 (TC=25) | 180 | 35.5 | N/A | 800 |
| Key Electrical Characteristics (Typ. @ Tj=25 unless otherwise noted): | |||||||
| Drain-source breakdown voltage (BVDSS) | 600 V (VGS=0 V, ID=250 A) | ||||||
| Gate threshold voltage (VGS(th)) | 2.9 - 3.9 V (VDS=VGS, ID=250 A) | ||||||
| Drain-source on-state resistance (RDS(ON)) | 0.14 - 0.18 (VGS=10 V, ID=10 A) | ||||||
| Total gate charge (Qg) | 35.5 nC (ID=10 A, VDS=400 V, VGS=10 V) | ||||||
| Continuous drain current (ID) | 20 A (TC=25), 12.7 A (TC=100) | ||||||
| Pulsed drain current (ID, pulse) | 60 A (TC=25) | ||||||
| Power dissipation (PD) | 163 W (TO220, TO262, TO247, TO263, TC=25), 34 W (TO220F, TC=25) | ||||||
| Single pulsed avalanche energy (EAS) | 570 mJ | ||||||
| MOSFET dv/dt ruggedness | 50 V/ns (VDS=0480 V) | ||||||
| Reverse diode dv/dt | 15 V/ns (VDS=0480 V, ISDID) | ||||||
| Operation and storage temperature (Tstg, Tj) | -55 to 150 | ||||||
| Applications: | Lighting, Server power supply, Charger, Hard switching PWM | ||||||
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