Low Voltage Trench N Channel MOSFET OSEN OSD90N03T Suitable for DC to DC Converter and Rectification
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Product Description
OSD90N03T LOW Voltage Trench Nch MOSFET
The OSD90N03T is a Low Voltage Trench N-Channel MOSFET designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities. This RoHS compliant component is ideal for DC to DC converters and synchronous rectification applications.
Product Attributes
- Brand: OSEN
- Certifications: RoHS compliant
Technical Specifications
| Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | V | 30 | |||
| Gate-Source Voltage-Continuous (VGS) | V | ±20 | |||
| Drain Current-Continuous (ID) (Note 2) | A | 90 | |||
| Drain Current-Single Pulsed (IDM) (Note 1) | A | 360 | |||
| Power Dissipation (PD) (Note 2) | W | 115 | |||
| Max.Operating junction temperature (Tj) | 150 | ||||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) (Note 1) | V | ID=250AVGS=0V | 30 | -- | -- |
| Gate Threshold Voltage (VGS(th)) | V | VDS=VGSID=250A | 1.0 | 1.5 | 2.5 |
| Drain-Source On-Resistance (RDS(on)) | m | VGS=10VID=1A | -- | 3.3 | -- |
| Gate-Body Leakage Current (IGSS) | nA | VGS=25VVDS=0 | -- | -- | ±100 |
| Zero Gate Voltage Drain Current (IDSS) | A | VDS=30VVGS=0 | -- | -- | 1 |
| Forward Transconductance (gfs) | S | VDS=10VID=20A | 20 | -- | -- |
| Switching Characteristics | |||||
| Turn-On Delay Time (Td(on)) | ns | VGS=10V, VDS=30V,ID=30A RG=1 | -- | 15 | -- |
| Rise Time (Tr) | ns | -- | 13 | -- | |
| Turn-Off Delay Time (Td(off)) | ns | -- | 35 | -- | |
| Fall Time (Tf) | ns | -- | 10 | -- | |
| Total Gate Charge (Qg) | nC | VDS=30VGS=4.5V ID=40A | -- | 78 | -- |
| Gate-Source Charge (Qgs) | nC | -- | 15 | -- | |
| Gate-Drain Charge (Qgd) | nC | -- | 25 | -- | |
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | pF | VDS=20VVGS=0 f=1MHz | -- | 3200 | -- |
| Output Capacitance (Coss) | pF | -- | 375 | -- | |
| Reverse Transfer Capacitance (Crss) | pF | -- | 60 | -- | |
| Diode Characteristics | |||||
| Continuous Drain-Source Diode Forward Current (IS) (Note 2) | A | -- | -- | 90 | |
| Diode Forward On-Voltage (VSD) | V | IS=40AVGS=0 | -- | -- | 1.2 |
| Thermal Resistance, Junction to Case (Rth(j-c)) | /W | -- | -- | 1.09 | |
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