R O BAV99W fast switching diode with 75 volts reverse breakdown voltage and solder plated terminals

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Product Description

BAV99W FAST SWITCHING DIODES

The BAV99W is a fast switching diode designed for high-speed applications. It offers a fast switching device with a reverse recovery time (TRR) of less than 4ns, a power dissipation of 200mW, and high stability and reliability. Its small signal switching and ultra-high speed switching capabilities make it suitable for various electronic circuits.

Product Attributes

Brand: (Hongjiacheng)
Origin: Zhuhai Hongjiacheng Technology co., Ltd
Compliance: RoHS-compliant, halogen-free
Flammability Rating: Molding compound meets UL 94V-0
Case: SOT-323
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Cathode line denotes the cathode end

Technical Specifications

Parameter	Symbol	Unit	Value	Test Conditions
Maximum repetitive peak reverse voltage	VRRM	V	100
Maximum RMS Voltage	VRMS	V	75
Reverse Breakdown voltage	V(BR)R	V	75	@IR=100A
Maximum Average Forward Rectified Current	IF(AV)	mA	150
Repetitive peak forward current	IFRM	mA	300
Non-Repetitive Peak forward surge current	IFSM	A	2.0	@tp=1.0ms
Power Dissipation	Pd	mW	200	(Ta=25 Unless otherwise specified)
Storage temperature	Tstg		-55 ~+150
Junction temperature	Tj		150
Typical thermal resistance	RJ-A	/W	625
Maximum instantaneous forward voltage	VF	V	0.715	IF=1mA (Ta=25 Unless otherwise noted)
Maximum instantaneous forward voltage	VF	V	0.855	IF=10mA (Ta=25 Unless otherwise noted)
Maximum instantaneous forward voltage	VF	V	1.00	IF=50mA (Ta=25 Unless otherwise noted)
Maximum instantaneous forward voltage	VF	V	1.25	IF=150mA (Ta=25 Unless otherwise noted)
Reverse Leakage Current	IR1	nA	25	VR=25V (Ta=25 Unless otherwise noted)
Reverse Leakage Current	IR2	A	2.5	VR=75V (Ta=25 Unless otherwise noted)
Total capacitance	CT	pF	2.0	VR=0V,f=1MHz (Ta=25 Unless otherwise noted)
Maximum reverse recovery time	Trr	ns	4.0	IF=10mAIrr=0.1IR, RL=100 (Ta=25 Unless otherwise noted)