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high voltage 650V power mosfet OSEN OSPF65R380 with improved dv dt capability and low on resistance

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Product Description

OSPF65R380 650V Super-Junction Power MOSFET

The OSPF65R380 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, improved dv/dt capability, and high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.

Product Attributes

  • Brand: OSEN
  • Publication Order Number: OSPF65R380
  • Rev: 21.2.10
  • Certifications: RoHS compliant

Technical Specifications

ParametersUnitRatingsConditions
VDSS Drain-Source VoltageV650
VGS Gate-Source Voltage-ContinuousV30
ID Drain Current-ContinuousA11Note 2
IDM Drain Current-Single PulsedA33Note 1
PD Power DissipationW30Note 2
Tj Max.Operating junction temperature150
BVDSS Drain-Source Breakdown VoltageV650ID=250A VGS=0VTJ=25C
VGS(th) Gate Threshold VoltageV2.5 -- 4.5VDS=VGSID=250A
RDS(on) Drain-Source On-Resistance-- 0.34 0.38VGS=10VID=5A
IGSS Gate-Body Leakage CurrentnA-- 100VGS=30VVDS=0
IDSS Zero Gate Voltage Drain CurrentA-- 1VDS=650VVGS=0
Td(on) Turn-On Delay Timens-- 24 --VDS=300V,ID=11A RG=25
Tr Rise Timens-- 54 --
Td(off) Turn-Off Delay Timens-- 89 --
Tf Fall Timens-- 25 --
Qg Total Gate ChargenC-- 19 --VDS=480V,VGS=10V ID=11A
Qgs Gate-Source ChargenC-- 4.0 --
Qgd Gate-Drain ChargenC-- 6.0 --
Ciss Input CapacitancepF-- 800 --VDS=50VVGS=0 f=1MHz
Coss Output CapacitancepF-- 110 --
Crss Reverse Transfer CapacitancepF-- 7 --
IS Continuous Drain-Source Diode Forward CurrentA-- 11
VSD Diode Forward On-VoltageV-- 0.9 1.2IS=11AVGS=0
Rth(j-c) Thermal Resistance, Junction to Case/W-- 4.2

Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW

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Company Hefei Purple Horn E-Commerce Co., Ltd.
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