900V N Channel MOSFET OSEN 2SK2611 Featuring High Drain Current and Ruggedness for Power Electronics

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Product Description

2SK2611 900V N-CHANNEL MOSFET

The 2SK2611 is a 900V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance with low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is suitable for use in high-efficiency switch mode power supplies, power factor correction circuits, and electronic lamp ballasts.

Product Attributes

Brand: OSEN
Publication Order Number: [2SK2611]
Revision: Rev 21.2.10
Package Type: TO-3PNB

Technical Specifications

Parameters	Ratings	Unit	Conditions
Absolute Maximum Ratings
Drain-Source Voltage (VDSS)	900	V
Gate-Source Voltage-Continuous (VGS)	30	V
Drain Current-Continuous (ID) (Note 2) (Tc=25C)	9	A
Drain Current-Single Pulsed (IDM) (Note 1)	27	A
Power Dissipation (PD) (Note 2)	150	W
Max.Operating junction temperature (Tj)	150
Electrical Characteristics (Tc=25C unless otherwise noted)
Static Characteristics
Drain-Source Breakdown Voltage Current (BVDSS) (Note 1)	900	V	ID=250A VGS=0VTJ=25C
Gate Threshold Voltage (VGS(th))	2.0 -- 4.0	V	VDS=VGSID=250A
Drain-Source On-Resistance (RDS(on))	-- 1.2 --		VGS=10VID=4A
Gate-Body Leakage Current (IGSS)	-- -- 100	nA	VGS=30VVDS=0
Zero Gate Voltage Drain Current (IDSS)	-- -- 10	A	VDS=900VVGS=0
Forward Transconductance (gfs)	-- 7.0 --	S	VDS=15VID=4A
Switching Characteristics
Turn-On Delay Time (Td(on))	-- 55 --	ns	VDS=450VID=9A RG=25Note 2
Rise Time (Tr)	-- 130 --	ns
Turn-Off Delay Time (Td(off))	-- 110 --	ns
Fall Time (Tf)	-- 80 --	ns
Total Gate Charge (Qg)	-- 70 --	nC	VDS=400V VGS=10V ID=9ANote 2
Gate-Source Charge (Qgs)	-- 35 --	nC
Gate-Drain Charge (Qgd)	-- 27 --	nC
Dynamic Characteristics
Input Capacitance (Ciss)	-- 2180 --	pF	VDS=25VVGS=0 f=1MHz
Output Capacitance (Coss)	-- 200 --	pF
Reverse Transfer Capacitance (Crss)	-- 58 --	pF
Continuous Drain-Source Diode Forward Current (IS) (Note 2)	-- -- 9	A
Diode Forward On-Voltage (VSD)	-- -- 1.4	V	IS=9AVGS=0
Thermal Resistance, Junction to Case (Rth(j-c))	-- -- 0.83	/W