High current n channel mosfet osen irfp360pbf 400V with low level drive and improved dv dt capability

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Product Description

Product Overview

The IRFP360PBF is a 400V N-CHANNEL MOSFET from OSEN, designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Its applications include high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. The TO-247S package is utilized.

Product Attributes

Brand: OSEN
Publication Order Number: IRFP360PBF
Revision: 21.2.10

Technical Specifications

Parameters	Symbol	Ratings	Unit	Conditions
Drain-Source Voltage	VDSS	400	V
Gate-Source Voltage-Continuous	VGS	30	V
Drain Current-Continuous (Note 2)	ID	23	A	Tc=25C
Drain Current-Single Pulsed (Note 1)	IDM	92	A
Power Dissipation (Note 2)	PD	280	W	Tc=25C
Max.Operating junction temperature	Tj	150
Drain-Source Breakdown Voltage Current (Note 1)	BVDSS	400	V	ID=250A VGS=0VTJ=25C
Gate Threshold Voltage	VGS(th)	2 -- 4.0	V	VDS=VGSID=250A
Drain-Source On-Resistance	RDS(on)	0.25		VGS=10VID=10A
Gate-Body Leakage Current	IGSS	100	nA	VGS=30VVDS=0
Zero Gate Voltage Drain Current	IDSS	1	A	VDS=400VVGS=0
Forward Transconductance	gfs	35	S	VDS=25VID=10A
Turn-On Delay Time	Tdon	20	ns	VDS=200VID=23A RG=4.5Note 2
Rise Time	Tr	80	ns
Turn-Off Delay Time	Tdoff	100	ns
Fall Time	Tf	70	ns
Total Gate Charge	Qg	180	nC	VDS=320V VGS=10V ID=23ANote 2
Gate-Source Charge	Qgs	50	nC
Gate-Drain Charge	Qgd	80	nC
Input Capacitance	Ciss	4500	pF	VDS=25VVGS=0 f=1MHz
Output Capacitance	Coss	1200	pF
Reverse Transfer Capacitance	Crss	500	pF
Continuous Drain-Source Diode Forward Current (Note 2)	IS	23	A
Diode Forward On-Voltage	VSD	1.4	V	IS=23AVGS=0
Thermal Resistance, Junction to Case	Rth(j-c)	0.45	/W