SOT23 Plastic Package Transistor PAKER PMBT5551 NPN Epitaxial Planar Die Construction Halogen Free

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The PMBT5551 is an NPN epitaxial planar die construction transistor in a SOT-23 small outline plastic package. It is halogen-free and RoHS compliant, offering an industry-standard package with tape/reel packing options. This transistor is recommended as a complementary type to the PMBT5401.

Product Attributes

Brand: (Parker Microelectronics)
Origin: Shenzhen, China
Material: Plastic-Encapsulate Transistors
Certifications: UL: 94V-0, Halogen free, RoHS compliant
Package Type: SOT-23

Technical Specifications

Parameter	Symbol	Test Condition	Min	Max	Unit
Breakdown Voltage	V(BR)CBO	IC=100uA, IE=0	180		V
	V(BR)CEO	IC=1mA, IB=0	160		V
	V(BR)EBO	IE=10uA, IC=0	6		V
	ICBO	VCB=120V, IE=0		50	nA
Emitter Cut-off Current	IEBO	VEB=4V, IC=0		50	nA
DC Current Gain	hFE(1)	VCE=5V, IC=1mA
	hFE(2)	VCE=5V, IC=10mA		300
	hFE(3)	VCE=5V, IC=50mA
Collector-Emitter Saturation Voltage	VCE(sat)1	IC=10mA, IB=1mA		0.15	V
Collector-Emitter Saturation Voltage	VCE(sat)2	IC=50mA, IB=5mA		0.20	V
Base-Emitter Saturation Voltage	VBE(sat)1	IC=10mA, IB=1mA		1.00	V
Base-Emitter Saturation Voltage	VBE(sat)2	IC=50mA, IB=5mA		1.00	V
Transition Frequency	fT	VCE=10V, IC=10mA,f=100MHz		300	MHz
Collector Output Capacitance	Cob	VCB=10V, IE=0, f=1MHz		6	pF
Thermal Resistance	RJA	From junction to ambient		416	/W
Junction Temperature	Tj			150
Storage Temperature	Tstg		-55	+150
Collector Current-Continuous	IC			600	mA
Collector Power Dissipation	PC			300	mW
Collector-Emitter Voltage	VCEO			160	V
Emitter-Base Voltage	VEBO			6	V
Collector-Base Voltage	VCBO			180	V
hFE Classification	HFE RANK		100-300
hFE Range	RANGE		100-200, 200-300