Low On Resistance 30V P Channel Enhancement Mode MOSFET Panjit PJE8405 R1 00001 with ESD Protection
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Product Description
Product Overview
The PPJE8405 is a 30V P-Channel Enhancement Mode MOSFET with ESD protection. It features low on-state resistance at various gate-source voltages and is manufactured using advanced trench process technology. This MOSFET is specifically designed for switch load and PWM applications. It is ESD protected (2KV HBM) and compliant with EU RoHS 2011/65/EU directive and IEC61249 standard (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -0.5 | -0.98 | -1.3 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-0.5A | - | 318 | 390 | m |
| VGS=-2.5V, ID=-0.3A | - | 427 | 560 | |||
| VGS=-1.8V, ID=-0.1A | - | 853 | 990 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | - | -0.01 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+8V, VDS=0V | - | +3.2 | +10 | uA |
| Total Gate Charge | Qg | VDS=-15V, ID=-0.5A, VGS=-4.5V (Note 1,2) | - | 1.6 | - | nC |
| Gate-Source Charge | Qgs | - | 0.5 | - | ||
| Gate-Drain Charge | Qg | - | 0.3 | - | ||
| Input Capacitance | Ciss | VDS=-15V, VGS=0V, f=1.0MHZ | - | 137 | - | pF |
| Output Capacitance | Coss | - | 23 | - | ||
| Reverse Transfer Capacitance | Crss | - | 10 | - | ||
| Switching Turn-On Delay Time | td(on) | VDD=-15V, ID=-0.5A, VGS=-4.5V, RG=6 (Note 1,2) | - | 11 | - | ns |
| Turn-On Rise Time | tr | - | 52 | - | ||
| Turn-Off Delay Time | td(off) | - | 65 | - | ||
| Turn-Off Fall Time | tf | - | 46 | - | ||
| Drain-Source Diode Forward Current | IS | - | - | -0.4 | A | |
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | - | -0.93 | -1.2 | V |
| Drain-Source Voltage | VDS | -30 | - | - | V | |
| Gate-Source Voltage | VGS | - | - | +8 | V | |
| Continuous Drain Current | ID | - | -0.5 | - | A | |
| Pulsed Drain Current | IDM | - | -2.0 | - | A | |
| Power Dissipation | PD | Ta=25oC | - | 300 | - | mW |
| Derate above 25oC | - | 2.4 | - | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | - | 150 | oC | |
| Typical Thermal resistance - Junction to Ambient | RJA | (Note 3) | - | 417 | - | oC/W |
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