Versatile PAKER 2N7002K NChannel MOSFET for Battery Protection and 5V Logic Level Control Circuits
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Delivery Time:
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Product Description
Product Overview
The 2N7002K is an N-Channel Advanced Power MOSFET featuring split gate trench MOSFET technology and a high-density cell design for low RDS(ON). Its advanced design offers excellent heat dissipation in a small SOT-23 package, making it suitable for various applications including voltage regulator modules, point-of-load modules, battery protection, load switching, brushed and brushless motor control, and 5V logic-level control. It also includes ESD protection.
Product Attributes
- Brand: 2N (Implied from product name)
- Origin: (Pakermicro)
- Package: SOT-23
- Certifications: Epoxy UL: 94V-0
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Gate-Source Voltage | VGS | ±20 | V | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=250µA | 60 | -- | -- | V |
| Maximum Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | TSTG | -50 | 150 | °C | ||
| Continuous Drain Current | ID | TA=25°C, VGS=4.5V | 380 | mA | ||
| Continuous Drain Current | ID | TA=70°C, VGS=4.5V | 240 | mA | ||
| Maximum Power Dissipation | PD | TA=25°C | 0.35 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 0.2 | W | ||
| Thermal Resistance Junction-Ambient | θJA | 400 | °Ω/W | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V, TA=25°C | -- | 1 | µA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V, TA=125°C | -- | 100 | µA | |
| Gate-Body Leakage Current | IGSS | VGS=±20V, VDS=0V | -- | ±10 | µA | |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250µA | 1.0 | 1.3 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=0.5A | 1.9 | 2.85 | Ω | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=4.5V, ID=0.2A | 2.5 | 4 | Ω | |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | 16 | -- | pF | |
| Output Capacitance | Coss | 3.8 | -- | pF | ||
| Reverse Transfer Capacitance | Crss | 0.6 | -- | pF | ||
| Total Gate Charge | Qg | VDS=30V, ID=0.5A, VGS=10V | 0.72 | -- | nC | |
| Gate Source Charge | Qgs | 0.15 | -- | nC | ||
| Gate Drain Charge | Qgd | 0.22 | -- | nC | ||
| Turn on Delay Time | td(on) | VDD=30V, ID=0.3A, RG=3.3Ω, VGS=10V | 5 | -- | ns | |
| Turn on Rise Time | tr | 3.3 | -- | ns | ||
| Turn Off Delay Time | td(off) | 18 | -- | ns | ||
| Turn Off Fall Time | tf | 5.2 | -- | ns | ||
| Source drain current (Body Diode) | ISD | TA=25°C | -- | 0.5 | A | |
| Forward on voltage (Body Diode) | VSD | Tj=25°C, ISD=0.5A, VGS=0V | 0.73 | 1.2 | V |
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