PANJIT PJD50N10AL AU L2 000A1 100V N Channel MOSFET with Trench Technology and High Density Cell Design
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Product Description
Product Overview
The PPJD50N10AL is a 100V N-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It offers high current handling capabilities and is compliant with EU RoHS 2011/65/EU directive and uses a Green molding compound as per IEC61249 Std. (Halogen Free).
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Package: TO-252AA
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current | ID | TC=25C | 42 | A | ||
| Continuous Drain Current | ID | TC=100C | 26 | A | ||
| Pulsed Drain Current | IDM | TC=25C | 150 | A | ||
| Power Dissipation | PD | TC=25C | 83 | W | ||
| Power Dissipation | PD | TC=100C | 33 | W | ||
| Continuous Drain Current | ID | TA=25C | 6.3 | A | ||
| Continuous Drain Current | ID | TA=70C | 5.1 | A | ||
| Power Dissipation | PD | TA=25C | 2.0 | W | ||
| Power Dissipation | PD | TA=70C | 1.3 | W | ||
| Single Pulse Avalanche Energy | EAS | L=3mH, IAS=6.5A, VDD=25V, VGS=10V | 63.4 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Typical Thermal Resistance (Junction to Case) | RJC | 1.5 | C/W | |||
| Typical Thermal Resistance (Junction to Ambient) | RJA | Mounted on a 1 inch with 2oz.square pad of copper. | 62.5 | C/W | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V,ID=250uA | 100 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.8 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V,ID=20A | - | 20 | 25 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V,ID=15A | - | 22 | 28.5 | m |
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | - | - | 1.0 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Total Gate Charge | Qg | VDS=50V, ID=10A, VGS=10V | - | 29 | - | nC |
| Gate-Source Charge | Qgs | - | 4.5 | - | ||
| Gate-Drain Charge | Qg | - | 6.4 | - | ||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1.0MHZ | - | 1485 | - | pF |
| Output Capacitance | Coss | - | 135 | - | ||
| Reverse Transfer Capacitance | Crss | - | 67 | - | ||
| Turn-On Delay Time | td(on) | VDD=50V, ID=10A, VGS=10V, RG=3 | - | 7.8 | - | ns |
| Turn-On Rise Time | tr | - | 30 | - | ||
| Turn-Off Delay Time | td(off) | - | 35 | - | ||
| Turn-Off Fall Time | tf | - | 14 | - | ||
| Drain-Source Diode Forward Current | IS | --- | - | 42 | A | |
| Diode Forward Voltage | VSD | IS=1.0A, VGS=0V | - | 0.7 | 1.2 | V |
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Hefei Purple Horn E-Commerce Co., Ltd.
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Contact Person
Sellina