P Channel Enhancement Mode MOSFET PANJIT PJA3441 R1 00001 40V for PWM and load switching applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The 40V P-Channel Enhancement Mode MOSFET, model PPJA3441, is designed for efficient load switching and PWM applications. It features advanced trench process technology, low on-resistance (RDS(ON)), and is compliant with EU RoHS 2011/65/EU and IEC61249 standard for green molding compound (Halogen Free). This MOSFET is housed in a compact SOT-23 package.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -40 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -1.0 | -1.5 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-3.1A | - | 74 | 88 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-2.6A | - | 88 | 108 | m |
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V | - | -0.01 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | +10 | +100 | nA |
| Total Gate Charge | Qg | VDS=-20V, ID=-3.1A, VGS=-4.5V | - | 6 | - | nC |
| Gate-Source Charge | Qgs | - | 1.6 | - | ||
| Gate-Drain Charge | Qg | - | 2.3 | - | ||
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, f=1.0MHZ | - | 505 | - | pF |
| Output Capacitance | Coss | - | 48 | - | ||
| Reverse Transfer Capacitance | Crss | - | 33 | - | ||
| Turn-On Delay Time | td(on) | VDD=-20V, ID=-2.5A, VGS=-10V, RG=1 | - | 6 | - | ns |
| Turn-On Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 18 | - | ||
| Turn-Off Fall Time | tf | - | 10 | - | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | --- | - | -1.0 | A | |
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | - | -0.82 | -1.2 | V |
| Reverse Recovery Time | trr | VGS=0V, IS=-2.5A dIF/ dt=100A/us | - | 13 | - | ns |
| Reverse Recovery Charge | Qrr | - | 8.7 | - | nC | |
| Drain-Source Voltage | VDS | -40 | - | - | V | |
| Gate-Source Voltage | VGS | +20 | - | - | V | |
| Continuous Drain Current | ID | -3.1 | - | - | A | |
| Pulsed Drain Current | IDM | (Note 4) | -12.4 | - | - | A |
| Power Dissipation | PD | Ta=25oC | - | 1.25 | - | W |
| Derate above 25oC | - | 10 | - | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | ~ | 150 | oC | |
| Typical Thermal resistance - Junction to Ambient | RJA | (Note 3) | - | 100 | - | oC/W |
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