20V P Channel MOSFET PANJIT PJA3415AE R1 00001 with 2KV HBM ESD Protection and Green Molding Compound
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The PPJA3415AE is a 20V P-Channel Enhancement Mode MOSFET featuring ESD protection. It utilizes an advanced trench process and is specifically designed for switch load and PWM applications. Key advantages include low on-state resistance at various gate-source voltages and continuous drain current levels, along with ESD protection up to 2KV HBM. This product is lead-free and compliant with EU RoHS 2011/65/EU, and manufactured with a green molding compound.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std.
- Material: Green molding compound
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source On-State Resistance | RDS(on) | VGS=-4.5V, ID=-4.3A | - | 42 | 50 | m |
| VGS=-2.5V, ID=-4.0A | - | 49 | 58 | m | ||
| VGS=-1.8V, ID=-2.4A | - | 59 | 73 | m | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | - | -0.4 | -1.0 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | - | -0.01 | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+8V, VDS=0V | - | +6 | +10 | uA |
| Total Gate Charge | Qg | VDS=-10V, ID=-4.3A, VGS=-4.5V | - | 24 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg d | - | 2.5 | - | ||
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1.0MHZ | - | 907 | - | pF |
| Output Capacitance | Coss | - | 90 | - | ||
| Reverse Transfer Capacitance | Crss | - | 70 | - | ||
| Turn-On Delay Time | td(on) | VDD=-10V, ID=-4.3A, VGS=-4.5V, RG=6 | - | 45 | - | ns |
| Turn-On Rise Time | tr | - | 79 | - | ||
| Turn-Off Delay Time | td(off) | - | 193 | - | ||
| Turn-Off Fall Time | tf | - | 826 | - | ||
| Drain-Source Diode Forward Current | IS | --- | - | -1.5 | A | |
| Diode Forward Voltage | VSD | IS=-1.0A, VGS=0V | - | 0.76 | -1.2 | V |
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