SOT 223 Package MOSFET Panjit PJW4P06A-AU R2 000A1 with High Switching Speed and Lead Free Material
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Product Description
Product Overview
The PPJW4P06A-AU is a 60V P-Channel Enhancement Mode MOSFET in a SOT-223 package. It offers high switching speed, improved dv/dt capability, low gate charge, and low reverse transfer capacitance. This MOSFET is AEC-Q101 qualified and compliant with EU RoHS 2.0 and IEC 61249 standards, making it suitable for various electronic applications.
Product Attributes
- Brand: Panjit International Inc.
- Package: SOT-223
- Certifications: AEC-Q101 qualified, EU RoHS 2.0 compliant, Green molding compound as per IEC 61249 standard
- Material: Lead free
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Voltage | VDS | -60 | V | |||
| Gate-Source Voltage | VGS | +20 | V | |||
| Continuous Drain Current | ID | TA=25C | -4 | A | ||
| TA=70C | -3.2 | |||||
| Pulsed Drain Current | IDM | -16 | A | |||
| Power Dissipation | PD | TA=25C | 3.1 | W | ||
| TA=70C | 2 | |||||
| Single Pulse Avalanche Energy | EAS | L=0.1mH, IAS=16A, VDD=25V, VGS=10V | 12.8 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | C | ||
| Typical Thermal Resistance - Junction to Ambient | RJA | TA=25C (Note 4,5) | 40.3 | C/W | ||
| Static Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250uA | -1 | -2.5 | V | |
| Drain-Source On-State Resistance | RDS(on) | VGS=-10V, ID=-4A | 87 | 110 | m | |
| VGS=-4.5V, ID=-2A | 110 | 130 | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | +100 | nA | ||
| Total Gate Charge | Qg | VDS=-30V, ID=-4A, VGS=-10V (Note 2,3) | 10 | nC | ||
| Gate-Source Charge | Qgs | 1.6 | ||||
| Gate-Drain Charge | Qg d | 3 | ||||
| Input Capacitance | Ciss | VDS=-30V, VGS=0V, f=1MHz | 785 | pF | ||
| Output Capacitance | Coss | 175 | ||||
| Reverse Transfer Capacitance | Crss | 112 | ||||
| Switching Time | td(on) | VDS=-30V, RL=30, VGS=-10V, RG=6.2 (Note 2,3) | 8 | ns | ||
| tr | 15 | |||||
| td(off) | 43 | |||||
| tf | 8.4 | |||||
| Drain-Source Diode Forward Current | IS | --- | -4 | A | ||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1 | V |
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