30V N Channel MOSFET PANJIT PJA3406 R1 00001 designed for switch load and PWM electronic applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The PPJA3406 is a 30V N-Channel Enhancement Mode MOSFET designed for switch load, PWM applications, and solid-state relays. It features advanced trench process technology for improved performance and is compliant with EU RoHS 2011/65/EU directive and IEC61249 standard for green molding compound (Halogen Free). This MOSFET offers low on-resistance values at specified gate-source and drain-source conditions.
Product Attributes
- Brand: Panjit International Inc.
- Certifications: EU RoHS 2011/65/EU, IEC61249 Std. (Halogen Free)
- Material: Green molding compound
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.0 | 1.37 | 2.1 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V, ID=4.4A | - | 35 | 48 | m |
| VGS=4.5V, ID=2.8A | - | 51 | 70 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | 0.01 | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=+20V, VDS=0V | - | +10 | +100 | nA |
| Total Gate Charge | Qg | VDS=15V, ID=4.4A, VGS=10V (Note 1,2) | - | 5.8 | - | nC |
| Gate-Source Charge | Qgs | - | 1 | - | ||
| Gate-Drain Charge | Qg d | - | 1 | - | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1.0MHZ | - | 235 | - | pF |
| Output Capacitance | Coss | - | 36 | - | ||
| Reverse Transfer Capacitance | Crss | - | 24 | - | ||
| Switching Characteristics | td(on) | VDD=15V, ID=4.4A, VGS=10V, RG=6 (Note 1,2) | - | 3 | - | ns |
| tr | - | 39 | - | |||
| td(off) | - | 23 | - | |||
| tf | - | 28 | - | |||
| Drain-Source Diode Forward Current | IS | - | - | 1.5 | A | |
| Diode Forward Voltage | VSD | IS=1.0A, VGS=0V | - | 0.77 | 1.2 | V |
Maximum Ratings and Thermal Characteristics
| Parameter | Symbol | Limit | Units | Note |
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | +20 | V | |
| Continuous Drain Current | ID | 4.4 | A | |
| Pulsed Drain Current | IDM | 17.6 | A | |
| Power Dissipation | PD | 1.25 | W | Ta=25oC |
| Derate above 25oC | 10 | mW/ oC | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55~150 | oC | |
| Typical Thermal resistance - Junction to Ambient | RJA | 100 | oC/W | Note 3 |
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