N Channel MOSFET PAKER 2SK3018 Featuring Small Outline SOT 23 Package for Power Applications
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The 2SK3018 is an N-Channel Enhancement Mode Power MOSFET in a SOT-23 small outline plastic package. It features a high-density cell design for ultra-low on-resistance and is manufactured using advanced trench process technology. This device is Halogen-free and RoHS compliant, offering a robust solution for various electronic applications.
Product Attributes
- Brand: (Parker Microelectronics)
- Origin: Shenzhen, China
- Certifications: UL: 94V-0, Halogen free, RoHS compliant
- Package Type: SOT-23
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| BV(BR)DSS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30VVGS=0V | -- | 1 | -- | uA |
| IGSS | Gate-Body Leakage Current | VGS=20VVDS=0V | -- | ±10 | -- | uA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 0.8 | 1.1 | 1.5 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4VID=10mA | -- | -- | 8 | Ω |
| RDS(on) | Drain-Source On-State Resistance | VGS=2.5VID=1mA | -- | -- | 13 | Ω |
| CISS | Input Capacitance | VDS=30VVGS=0V f=1MHz | -- | 22 | -- | pF |
| COSS | Output Capacitance | VDS=30VVGS=0V f=1MHz | -- | 3.5 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=30VVGS=0V f=1MHz | -- | 2.9 | -- | pF |
| Qgd | Gate Drain Charge | VDS=30VID=0.2A VGS=4.5V | -- | 1.4 | -- | nC |
| Qg | Total Gate Charge | VDS=30VID=0.2A VGS=4.5V | -- | 2.1 | -- | nC |
| Qgs | Gate Source Charge | VDS=30VID=0.2A VGS=4.5V | -- | 0.27 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=30VID=0.2A VGS=4.5VRG=10 | -- | 3.6 | -- | nS |
| tr | Turn-on Rise Time | VDD=30VID=0.2A VGS=4.5VRG=10 | -- | 23.2 | -- | nS |
| td(off) | Turn-Off Delay Time | VDD=30VID=0.2A VGS=4.5VRG=10 | -- | 5.5 | -- | nS |
| tf | Turn-Off Fall Time | VDD=30VID=0.2A VGS=4.5VRG=10 | -- | 23.3 | -- | nS |
| VSD | Forward on voltage | Tj=25Is=0.1A | -- | -- | 1.2 | V |
| Electrical Characteristics | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | 30 | -- | -- | V |
| VGS | Gate-Source Voltage | -- | -- | -- | ±20 | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | ℃ |
| TSTG | Storage Temperature Range | -- | -50 | -- | 155 | ℃ |
| IS | Diode Continuous Forward Current | Tc=25C | -- | 0.1 | -- | A |
| IDM | Pulse Drain Current | Tc=25C | -- | 0.5 | -- | A |
| ID | Continuous Drain Current | Tc=25C, GS=10V | -- | 0.1 | -- | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | 0.2 | -- | W |
| ESD | Gate-Source ESD Rating (HBM, Method 3015) | -- | -- | 2000 | -- | V |
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